التفاصيل البيبلوغرافية
| العنوان: |
Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H–SiC IGBT. |
| المؤلفون: |
Konishi, Kazuya, Nakamura, Yu, Nagae, Akemi, Kawabata, Naoyuki, Tanaka, Takanori, Tomita, Nobuyuki, Watanabe, Hiroshi, Tomohisa, Shingo, Miura, Naruhisa |
| المصدر: |
Japanese Journal of Applied Physics; Jan2020, Vol. 59 Issue 1, p1-6, 6p |
| مستخلص: |
The Burgers vector and inclination angles for threading dislocations which induce current leakage have been investigated for SiC insulated gate bipolar transistors fabricated with a thickness of a drift layer as large as 100 μm on a 4H–SiC substrate. Direct analysis by convergent-beam electron diffraction to a threading mixed dislocation (TMD) inducing current leakage revealed that the Burgers vector was b = [ ], which has been theoretically predicted but had not been observed. Although a range of inclination zenith angles of TMDs from c-axis has been observed by non-destructive two-photon-excited photoluminescence as 12°–14°, which is in good agreement with theoretical values, their azimuthal angles on (0001) plane are significantly different from theoretical predictions. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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