التفاصيل البيبلوغرافية
| العنوان: |
Emission Regimes of 1.06 μm Spectral Bandwidth Two-Sectional Lasers with Quantum Dot Based Active Layer. |
| المؤلفون: |
Gadzhiyev, I. M., Buyalo, M. S., Payusov, A. S., Gubenko, A. E., Mikhrin, S. S., Nevedomsky, V. N., Portnoi, E. L. |
| المصدر: |
Technical Physics Letters; Nov2018, Vol. 44 Issue 11, p965-968, 4p |
| مصطلحات موضوعية: |
QUANTUM dots, BANDWIDTHS, LASERS, SEMICONDUCTOR lasers, LASER pulses |
| مستخلص: |
We have investigated two-sectional semiconductor lasers with an active region comprising five layers of InGaAs quantum dots, emitting in the spectral range near 1.06 μm. Regimes of passive mode-locking, passive Q-switching, and mode-locking with pulse modulated amplitude are realized. The transition conditions between generation regimes are investigated. The frequency tuning range with current increase in the Q-switched regime exceeds more than 4 times. The duration of the mode-locked pulses was 2 ps at the pulse repetition rate of 44.3 GHz. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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