التفاصيل البيبلوغرافية
| العنوان: |
Few-layer MoS2 as nitrogen protective barrier. |
| المؤلفون: |
B Akbali, A Yanilmaz, A Tomak, S Tongay, C Çelebi, H Sahin |
| المصدر: |
Nanotechnology; 10/13/2020, Vol. 28 Issue 41, p1-1, 1p |
| مصطلحات موضوعية: |
MOLYBDENUM disulfide, RAMAN spectroscopy, DENSITY functional theory |
| مستخلص: |
We report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer. [ABSTRACT FROM AUTHOR] |
|
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| قاعدة البيانات: |
Complementary Index |