التفاصيل البيبلوغرافية
| العنوان: |
Investigation in band structures of GaAs/AlGaAs nanostructures superlattices at high magnetic field and low temperatures. |
| المؤلفون: |
Barkissy, Driss, Nafidi, Abdelhakim, Boutramine, Abderrazak, Benchtaber, Nassima, Khalal, Ali, El Gouti, Thami |
| المصدر: |
Applied Physics A: Materials Science & Processing; Jan2017, Vol. 123 Issue 1, p1-7, 7p, 1 Diagram, 4 Graphs |
| مصطلحات موضوعية: |
ELECTRONIC band structure, GALLIUM arsenide semiconductors, NANOSTRUCTURED materials, SUPERLATTICES, MAGNETIC fields, LOW temperatures, THICKNESS measurement |
| مستخلص: |
We have investigated in the band structures E( d ), E( k , k ) and the effective mass m*/ m , respectively, along the growth axis and in the plane of GaAs ( d = 19 nm)/AlGaAs ( d = 5 nm) superlattice, performed in the envelope function formalism. Our results show the effect of the well thickness d and the temperature on the electronic structures of this superlattice. The latter has a direct band gap of 1.529 eV, and the corresponding cutoff wavelength indicates that it can be used as a near-infrared detector. The position of Fermi level, based on the magnetoresistance measurements of Smrčka et al. and Fermi-Dirac integral computation at 0.4 K, predicts that this sample exhibits n-type conductivity with a two-dimensional electron gas. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Complementary Index |