التفاصيل البيبلوغرافية
| العنوان: |
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition. |
| المؤلفون: |
Kaess, Felix, Mita, Seiji, Jingqiao Xie, Reddy, Pramod, Klump, Andrew, Hernandez-Balderrama, Luis H., Shun Washiyama, Franke, Alexander, Kirste, Ronny, Hoffmann, Axel, Collazo, Ramón, Sitar, Zlatko |
| المصدر: |
Journal of Applied Physics; 2016, Vol. 120 Issue 10, p105701-1-105701-7, 7p, 6 Graphs |
| مصطلحات موضوعية: |
METAL organic chemical vapor deposition, ELECTRONS, MASS spectrometry, IONS, AMMONIA |
| مستخلص: |
In the low doping range below 1 ×1017cm-3, carbon was identified as the main defect attributing to the sudden reduction of the electron mobility, the electron mobility collapse, in n-type GaN grown by low pressure metalorganic chemical vapor deposition. Secondary ion mass spectroscopy has been performed in conjunction with C concentration and the thermodynamic Ga supersaturation model. By controlling the ammonia flow rate, the input partial pressure of Ga precursor, and the diluent gas within the Ga supersaturation model, the C concentration in Si-doped GaN was controllable from 6 ×1019cm-3 to values as low as 2 ×1015cm-3. It was found that the electron mobility collapsed as a function of free carrier concentration, once the Si concentration closely approached the C concentration. Lowering the C concentration to the order of 1015cm-3 by optimizing Ga supersaturation achieved controllable free carrier concentrations down to 5 × 1015cm-3 with a peak electron mobility of 820 cm²/V s without observing the mobility collapse. The highest electron mobility of 1170 cm²/V s was obtained even in metalorganic vapor deposition-grown GaN on sapphire substrates by optimizing growth parameters in terms of Ga supersaturation to reduce the C concentration. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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