التفاصيل البيبلوغرافية
| العنوان: |
New simulation methodology for effects of radiation in semiconductor chip structures. |
| المؤلفون: |
Tang, H. H. K.1 hktang@us.ibm.com, Murray, C. E.1 conal@us.ibm.com, Fiorenza, G.1 gfiorenz@us.ibm.com, Rodbell, K. P.1 rodbell@us.ibm.com, Gordon, M. S.1 gordonm@us.ibm.com, Heidel, D. F.1 heidel@us.ibm.com |
| المصدر: |
IBM Journal of Research & Development. May/Jun2008, Vol. 52 Issue 3, p245-253. 9p. 2 Diagrams, 1 Graph. |
| مصطلحات موضوعية: |
*INTEGRATED circuits, *SIMULATION methods & models, *MONTE Carlo method, SEMICONDUCTORS, COMPLEMENTARY metal oxide semiconductors, LOGIC circuits |
| مستخلص: |
New and effective modeling methodologies have been developed to simulate particle transport in arbitrarily complex back-end-of-line (BEOL) topologies of a semiconductor chip. They are applied to address a number of critical problems that involve the single-event-effect analysis of new device structures for 65-nm CMOS (complementary metal-oxide semiconductor) technologies and beyond. These new simulation techniques also provide a generic building block on which a new version of the IBM soft-error Monte Carlo model (SEMM-2) is constructed. In this paper, we review the basic concepts of this development and discuss some important applications. [ABSTRACT FROM AUTHOR] |
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