التفاصيل البيبلوغرافية
| العنوان: |
Small Subthreshold Swing Diamond Field Effect Transistors With SnO 2 Gate Dielectric. |
| المؤلفون: |
He, Shi1, Wang, Wei1 wei_wang2014@xjtu.edu.cn, Chen, Genqiang1, Zhang, Shumiao1, Li, Qi1, Zhang, Qianwen1, Chang, Xiaohui1, Wang, Yan-Feng1, Zhang, Minghui1, Wang, Hong-Xing1 |
| المصدر: |
IEEE Transactions on Electron Devices. Aug2022, Vol. 69 Issue 8, p4427-4431. 5p. |
| مصطلحات موضوعية: |
FIELD-effect transistors, METAL semiconductor field-effect transistors, DIELECTRICS, DIAMOND surfaces, DIAMONDS, STRAY currents, MODULATION-doped field-effect transistors, BREAKDOWN voltage |
| مستخلص: |
A small subthreshold swing (SS) hydrogen-terminated diamond field-effect transistor is realized by using a wide bandgap material (SnO2). Results showed an SS of 106.4 mV/dec, which should be ascribed to the low interface state density (1.05 $\times10$ 12 cm $^{-2}\cdot $ eV−1) between SnO2 and diamond. The fixed charge density and trapped charge density are $1.1\times10$ 12 cm−2 and $8.6\times10$ 11 cm−2, respectively. Leakage current between source and gate is less than $2.1\times10$ −8 A at gate voltages from −5.0 to 1.0 V and the breakdown voltage is measured to be −180 V. In addition, the devices exhibit normally- OFF characteristics, whose threshold voltage and maximum drain current density are −0.12 V and −21.6 mA/mm with 4- $\mu \text{m}$ gate at ${V}_{GS} = -3$ V. The ON/OFF ratio is around 107 and the maximum effective mobility is extracted to be 165 cm2/(Vs). This work indicates that SnO2 dielectric could form low interface state density with hydrogen-terminated diamond surface and it also provides a simple method to realize normally- OFF devices. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
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