التفاصيل البيبلوغرافية
| العنوان: |
Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM). |
| المؤلفون: |
Lee, Jae Seong1 amuroqueen@sogang.ac.kr, Choi, Woo Young1 wchoi@sogang.ac.kr |
| المصدر: |
IEEE Transactions on Electron Devices. Oct2021, Vol. 68 Issue 10, p4903-4909. 7p. |
| مصطلحات موضوعية: |
*RANDOM access memory, ASSOCIATIVE storage, STATIC random access memory, STRAY currents, UNIT cell |
| مستخلص: |
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current. [ABSTRACT FROM AUTHOR] |
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| قاعدة البيانات: |
Business Source Index |