Academic Journal

Characterization of the Mn acceptor level in GaAs.

التفاصيل البيبلوغرافية
العنوان: Characterization of the Mn acceptor level in GaAs.
المؤلفون: Montelius, L., Nilsson, S., Samuelson, L., Janzén, E., Ahlström, M.
المصدر: Journal of Applied Physics. 8/1/1988, Vol. 64 Issue 3, p1564. 4p. 1 Chart, 2 Graphs.
مصطلحات موضوعية: *MANGANESE, *GALLIUM arsenide, *SPECTRUM analysis
مستخلص: Presents a study which investigated the manganese acceptor level in gallium arsenide using deep-level transient spectroscopy. Measurements of the emission and capture hole of electrons; Comparison between electron capture rates obtained from space-charge techniques and from photoluminescence decay measurements; Use of the radiative electron capture of the manganese acceptor.
قاعدة البيانات: Academic Search Index
الوصف
تدمد:00218979
DOI:10.1063/1.341837