التفاصيل البيبلوغرافية
العنوان: |
Characterization of the Mn acceptor level in GaAs. |
المؤلفون: |
Montelius, L., Nilsson, S., Samuelson, L., Janzén, E., Ahlström, M. |
المصدر: |
Journal of Applied Physics. 8/1/1988, Vol. 64 Issue 3, p1564. 4p. 1 Chart, 2 Graphs. |
مصطلحات موضوعية: |
*MANGANESE, *GALLIUM arsenide, *SPECTRUM analysis |
مستخلص: |
Presents a study which investigated the manganese acceptor level in gallium arsenide using deep-level transient spectroscopy. Measurements of the emission and capture hole of electrons; Comparison between electron capture rates obtained from space-charge techniques and from photoluminescence decay measurements; Use of the radiative electron capture of the manganese acceptor. |
قاعدة البيانات: |
Academic Search Index |