Academic Journal
Shockley–Read recombination and trapping in p-type HgCdTe.
العنوان: | Shockley–Read recombination and trapping in p-type HgCdTe. |
---|---|
المؤلفون: | Fastow, R., Goren, D., Nemirovsky, Y. |
المصدر: | Journal of Applied Physics. 10/1/1990, Vol. 68 Issue 7, p3405. 8p. |
مصطلحات موضوعية: | *SEMICONDUCTORS, *TRANSIENTS (Dynamics) |
مستخلص: | Reviews the concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime and the transient excess-carrier lifetime in semiconductors. Discussion on the steady-state lifetime; Transient recombination response and transient lifetimes; Measurements. |
قاعدة البيانات: | Academic Search Index |
ResultId |
1 |
---|---|
Header |
asx Academic Search Index 7656183 1269 6 Academic Journal academicJournal 1268.93701171875 |
PLink |
https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=asx&AN=7656183&custid=s6537998&authtype=sso |
FullText |
Array
(
[Availability] => 0
)
|
Items |
Array
(
[Name] => Title
[Label] => Title
[Group] => Ti
[Data] => Shockley–Read recombination and trapping in p-type HgCdTe.
)
Array ( [Name] => Author [Label] => Authors [Group] => Au [Data] => <searchLink fieldCode="AR" term="%22Fastow%2C+R%2E%22">Fastow, R.</searchLink><br /><searchLink fieldCode="AR" term="%22Goren%2C+D%2E%22">Goren, D.</searchLink><br /><searchLink fieldCode="AR" term="%22Nemirovsky%2C+Y%2E%22">Nemirovsky, Y.</searchLink> ) Array ( [Name] => TitleSource [Label] => Source [Group] => Src [Data] => <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>. 10/1/1990, Vol. 68 Issue 7, p3405. 8p. ) Array ( [Name] => Subject [Label] => Subject Terms [Group] => Su [Data] => *<searchLink fieldCode="DE" term="%22SEMICONDUCTORS%22">SEMICONDUCTORS</searchLink><br />*<searchLink fieldCode="DE" term="%22TRANSIENTS+%28Dynamics%29%22">TRANSIENTS (Dynamics)</searchLink> ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => Reviews the concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime and the transient excess-carrier lifetime in semiconductors. Discussion on the steady-state lifetime; Transient recombination response and transient lifetimes; Measurements. ) |
RecordInfo |
Array
(
[BibEntity] => Array
(
[Identifiers] => Array
(
[0] => Array
(
[Type] => doi
[Value] => 10.1063/1.346346
)
)
[Languages] => Array
(
[0] => Array
(
[Code] => eng
[Text] => English
)
)
[PhysicalDescription] => Array
(
[Pagination] => Array
(
[PageCount] => 8
[StartPage] => 3405
)
)
[Subjects] => Array
(
[0] => Array
(
[SubjectFull] => SEMICONDUCTORS
[Type] => general
)
[1] => Array
(
[SubjectFull] => TRANSIENTS (Dynamics)
[Type] => general
)
)
[Titles] => Array
(
[0] => Array
(
[TitleFull] => Shockley–Read recombination and trapping in p-type HgCdTe.
[Type] => main
)
)
)
[BibRelationships] => Array
(
[HasContributorRelationships] => Array
(
[0] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Fastow, R.
)
)
)
[1] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Goren, D.
)
)
)
[2] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Nemirovsky, Y.
)
)
)
)
[IsPartOfRelationships] => Array
(
[0] => Array
(
[BibEntity] => Array
(
[Dates] => Array
(
[0] => Array
(
[D] => 01
[M] => 10
[Text] => 10/1/1990
[Type] => published
[Y] => 1990
)
)
[Identifiers] => Array
(
[0] => Array
(
[Type] => issn-print
[Value] => 00218979
)
)
[Numbering] => Array
(
[0] => Array
(
[Type] => volume
[Value] => 68
)
[1] => Array
(
[Type] => issue
[Value] => 7
)
)
[Titles] => Array
(
[0] => Array
(
[TitleFull] => Journal of Applied Physics
[Type] => main
)
)
)
)
)
)
)
|
IllustrationInfo |