Academic Journal

Shockley–Read recombination and trapping in p-type HgCdTe.

التفاصيل البيبلوغرافية
العنوان: Shockley–Read recombination and trapping in p-type HgCdTe.
المؤلفون: Fastow, R., Goren, D., Nemirovsky, Y.
المصدر: Journal of Applied Physics. 10/1/1990, Vol. 68 Issue 7, p3405. 8p.
مصطلحات موضوعية: *SEMICONDUCTORS, *TRANSIENTS (Dynamics)
مستخلص: Reviews the concepts and definitions of the steady-state minority-carrier lifetime, the steady-state majority-carrier lifetime and the transient excess-carrier lifetime in semiconductors. Discussion on the steady-state lifetime; Transient recombination response and transient lifetimes; Measurements.
قاعدة البيانات: Academic Search Index
الوصف
تدمد:00218979
DOI:10.1063/1.346346