التفاصيل البيبلوغرافية
| العنوان: |
Electrical properties of contact etched p-Si: A comparison between magnetically enhanced and conventional reactive ion etching. |
| المؤلفون: |
Awadelkarim, O. O., Mikulan, P. I., Gu, T., Reinhardt, K. A., Chan, Y. D. |
| المصدر: |
Journal of Applied Physics. 8/15/1994, Vol. 76 Issue 4, p2270. 9p. 2 Charts, 7 Graphs. |
| مصطلحات موضوعية: |
*BORON, *SILICON, *CRYSTAL etching |
| مستخلص: |
Presents a study which detailed a comparative study on the damage induced in boron-doped silicon by contact etching. Comparison of approaches to the study; Description of the structure-chemistry combinations used; Damage examined in the silicon substrates of both structures; Techniques used in the examination of the types of damage. |
| قاعدة البيانات: |
Academic Search Index |