التفاصيل البيبلوغرافية
| العنوان: |
Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm. |
| المؤلفون: |
Tsatsul'nikov, A. F., Kovsh, A. R., Zhukov, A. E., Shernyakov, Yu. M., Musikhin, Yu. G., Ustinov, V. M., Bert, N. A., Kop'ev, P. S., Alferov, Zh. I., Mintairov, A. M., Merz, J. L., Ledentsov, N. N., Bimberg, D. |
| المصدر: |
Journal of Applied Physics. 12/1/2000, Vol. 88 Issue 11, p6272. 4p. |
| مصطلحات موضوعية: |
*PHOTOLUMINESCENCE, *QUANTUM dots, *GALLIUM arsenide |
| مستخلص: |
Quantum dots (QDs) formed on GaAs(100) substrates by InAs deposition followed by (Al,Ga)As or (In,Ga,Al)As overgrowth demonstrate a photoluminescence (PL) peak that is redshifted (up to 1.3 μm) compared to PL emission of GaAs-covered QDs. The result is attributed to redistribution of InAs molecules in the system in favor of the QDs, stimulated by Al atoms in the cap layer. The deposition of a 1 nm thick AlAs cover layer on top of the InAs-GaAs QDs results in replacement of InAs molecules of the wetting layer by AlAs molecules, leading to a significant increase in the heights of the InAs QDs, as follows from transmission electron microscopy. This effect is directly confirmed by transmission electron microscopy indicating a transition to a Volmer-Weber-like QD arrangement. We demonstrate an injection laser based on this kind of QDs. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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