التفاصيل البيبلوغرافية
| العنوان: |
Suppression of phase separation in AlGaInAs compositionally graded buffers for 1550 nm photovoltaic converters on GaAs. |
| المؤلفون: |
Schulte, Kevin L.1 (AUTHOR) kevin.schulte@nrel.gov, Geisz, John F.1 (AUTHOR), Guthrey, Harvey L.1 (AUTHOR), France, Ryan M.1 (AUTHOR), da Costa, Edgard Winter1 (AUTHOR), Steiner, Myles A.1 (AUTHOR) |
| المصدر: |
Journal of Applied Physics. 1/21/2025, Vol. 137 Issue 3, p1-11. 11p. |
| مصطلحات موضوعية: |
*PHASE separation, *LATTICE constants, *EPITAXY, *TRANSMISSION electron microscopy, *DISLOCATION density |
| مستخلص: |
We investigate strategies to suppress phase separation and reduce threading dislocation density (TDD) in AlGaInAs compositionally graded buffers (CGBs) that span the lattice constant range from GaAs to InP. Combining the results from high resolution x-ray diffraction, cathodoluminescence, transmission electron microscopy, and photovoltaic device measurements, we correlate the choices of epitaxial growth conditions with the defect structure of the CGBs and subsequent device performance. Both the use of substrates with high misorientation off (100) toward the (111)A plane and Zn doping instead of Si doping are shown to suppress phase separation and reduce TDD. We demonstrate a 0.74 eV GaInAs device grown on a GaAs substrate offcut 19.5° toward (111)A using a Zn-doped AlGaInAs CGB with TDD = 3.5 ± 0.2 × 106 cm−2 that has a bandgap-open circuit voltage offset of only 0.434 V measured under the AM1.5G solar spectrum. We characterized this device under high-intensity irradiance from a 1570 nm laser and measured a 31.9% peak laser power conversion efficiency at 3.6 W/cm2 irradiance. These results provide a roadmap to the manufacture of laser- and thermal-power conversion devices with the performance and cost-effectiveness needed to drive adoption of these technologies at scale. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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