التفاصيل البيبلوغرافية
| العنوان: |
Band alignment in Zn(1−x)MgxO:Al/SiOx/Si heterostructures for photovoltaic applications realized by atomic layer deposition: Effects of Al doping and Mg alloying. |
| المؤلفون: |
Schifano, R.1 (AUTHOR) schifano@ifpan.edu.pl, Gieraltowska, S.1 (AUTHOR), Kurek, J.1,2,3 (AUTHOR), Wachnicki, L.1 (AUTHOR), Rehman, U.1 (AUTHOR), Budiakivska, D.1,2 (AUTHOR), Chusnutdinow, S.1 (AUTHOR), Kopalko, K.1 (AUTHOR), Porro, S.4 (AUTHOR), Jakiela, R.1 (AUTHOR), Minikayev, R.1 (AUTHOR), Witkowski, B. S.1 (AUTHOR), Pawlowski, M.2 (AUTHOR), Jastrzebski, C.2 (AUTHOR), Thøgersen, A.5 (AUTHOR) |
| المصدر: |
Journal of Applied Physics. 12/28/2024, Vol. 136 Issue 24, p1-17. 17p. |
| مصطلحات موضوعية: |
*SCANNING transmission electron microscopy, *ATOMIC layer deposition, *CONDUCTION bands, *COMPOUND semiconductors, *VALENCE bands, *OPEN-circuit voltage |
| مستخلص: |
In this work, the impact of Al doping and Mg alloying on the conduction band misalignment (Δ E C) between ZnO and (100) Si with a SiO x interlayer was studied by combining capacitance vs voltage, Hall and x-ray diffraction measurements, energy-dispersive x-ray spectroscopy, secondary mass spectrometry, and high-resolution scanning transmission electron microscopy. To decouple the effect of the high carrier density in the ZnO-based layers due to the Al introduction, the measured Δ E C was corrected for the conduction band lowering effect taking into account the conduction band non-parabolicity of ZnO. Then, from the Mg content dependence, using the interface-induced gap states approach, branch point energies referred to the valence band maximum equal to (2.7 ± 0.2) and (3.6 ± 0.4) eV were extracted for ZnO and MgO, respectively. These branch point energies were obtained under the assumption of a linear variation between the respective values of the corresponding two binary compound semiconductors, ZnO and MgO, and taking into account the presence of the SiO x interlayer. Furthermore, in the case of the undoped Zn 0.96 Mg 0.04 O layers, a ∼ 0.27 eV reduced Δ E C was found, with the difference with respect to Zn 0.94 Mg 0.06 O:Al attributed to the presence of a downward band bending toward the interface with SiO x. Full 1 × 1 cm test solar cells based on Zn 0.8 Mg 0.2 O:Al layers exhibited short circuit currents, open circuit voltages, fill factors, and efficiencies that varied in the (28 ± 1) mA / cm 2 , (430 ± 20) mV, (61 ± 2) %, and (7.2 ± 0.3) % ranges with the residual Δ E C ∼ 0.6 eV being among the main causes of the reduced device performances. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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