التفاصيل البيبلوغرافية
| العنوان: |
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer. |
| المؤلفون: |
Uzuhashi, Jun1,2 (AUTHOR) uzuhashi.jun@nims.go.jp, Chen, Jun1 (AUTHOR) chen.jun@nims.go.jp, Tanaka, Ryo3 (AUTHOR), Takashima, Shinya3 (AUTHOR), Edo, Masaharu3 (AUTHOR), Ohkubo, Tadakatsu1 (AUTHOR), Sekiguchi, Takashi1,2 (AUTHOR) |
| المصدر: |
Journal of Applied Physics. 8/7/2024, Vol. 136 Issue 5, p1-7. 7p. |
| مصطلحات موضوعية: |
*ATOM-probe tomography, *SCANNING transmission electron microscopy, *ION implantation, *GALLIUM nitride |
| مستخلص: |
An area-selectable Mg doping via ion implantation (I/I) is essential to realize gallium nitride (GaN) based power switching devices. Conventional post-implantation annealing forms considerable defects in the GaN, resulting in extremely low activation efficiency. The recent invention of ultrahigh-pressure annealing (UHPA) has substantially improved the p-type activation efficiency; however, the UHPA causes an unexpected Mg diffusion. Thus, both annealing processes resulted in a much lower Mg concentration in the GaN matrix than the Mg dose. In this study, the effect of a sequential N I/I for p-type Mg-implanted GaN was investigated by the correlative cathodoluminescence, transfer length method, scanning transmission electron microscopy, and atom probe tomography (APT) analyses. APT results have revealed that the sequential N I/I can successfully maintain the Mg concentration in the GaN matrix in the higher range of 1018 cm−3 or more. Our investigation suggests that sequential N I/I is a promising technique to maintain the Mg concentration higher and improve the p-type activation efficiency. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
Academic Search Index |