التفاصيل البيبلوغرافية
| العنوان: |
Realization of CO2 gas sensors and broadband photodetectors using metal/high-k CeO2/p-Si heterojunction. |
| المؤلفون: |
Godavarthi, S.1 (AUTHOR), Kushvaha, Sunil Singh2 (AUTHOR), Saha, D.3 (AUTHOR), Altaf, Mohammad4 (AUTHOR), Nallabala, Nanda Kumar Reddy1,5 (AUTHOR) nandasvu@gmail.com, Yuvaraj, C.6 (AUTHOR), Reddy, M. Ramprasad7 (AUTHOR), Kesarla, Mohan Kumar8 (AUTHOR), Bakash, K. Rahim9 (AUTHOR), Krishna, G. Gopi10 (AUTHOR), Rosaiah, P.11 (AUTHOR), Karthik, T.V.K.1,12 (AUTHOR) krishnakarthik.tv@gmail.com, Minnam Reddy, Vasudeva Reddy1,13 (AUTHOR) drmvasudr9@gmail.com |
| المصدر: |
Ceramics International. Sep2024:Part A, Vol. 50 Issue 18, p31845-31858. 14p. |
| مصطلحات موضوعية: |
*CARBON dioxide detectors, *GAS detectors, *CERIUM oxides, *PHOTODETECTORS, *HETEROJUNCTIONS |
| مستخلص: |
Realization of high- k dielectric oxide material-based devices such as photodetectors (PDs)/gas sensors fabricated on silicon substrate seems to be the utmost promising as a cost-effective approach to use in next generation optoelectronic field. We have explored metal/CeO 2 /p-Si heterojunction to construct as a broadband (BB) PD and CO 2 gas sensor device. The effect of post-annealing procedure on photodetection and CO 2 gas sensing characteristics were correlated using AFM, XRD, XPS, Raman and UV–Vis studies. At 0 V bias, the fabricated as-deposited Au/CeO 2 /p-Si PD device exhibits outstanding performance with enhanced responsivity of 85 AW−1 (at 910 nm), detectivity of 1.36×1015 Jones (at 850 nm), EQE of 1.3×104 % (at 850 nm), faster rise and fall times of 124 ms and 107 ms (at 900 nm). On the other hand, the photodetection characteristic parameters were slightly deteriorated as a function of annealing with respect to the as-deposited device. One of the causes for this fact was attributed to the increase in rms surface roughness (AFM) and decrease in absorbance of CeO 2 thin film (UV–Vis). Additionally, Ag/CeO 2 /p-Si heterojunction was studied as a CO 2 gas sensor and evaluated response/recovery times as a function of CO 2 gas concentration. Sensing responses of CeO 2 as-deposited, CeO 2 -400, CeO 2 -500, CeO 2 -600 and CeO 2 -700 °C were around 58, 60, 62, 81 and 90 %, respectively, when exposed to 200 ppm of CO 2. Thus, we validate that the prospect of integrating enhanced performance in BB PDs and CO 2 gas sensors using metal/CeO 2 /p-Si heterojunction could serve as a basic building block in near future optoelectronic applications. Furthermore, the effect of post-annealing temperature on the morphological, structural, BB photodetection and CO 2 gas sensing properties were discussed in detail. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
Academic Search Index |