التفاصيل البيبلوغرافية
العنوان: |
Influence of local structures on amorphous alumina exhibiting resistance random-access memory function. |
المؤلفون: |
Kubota, Masato1 (AUTHOR) kubota.masato@jaea.go.jp, Kato, Seiichi2 (AUTHOR) |
المصدر: |
Journal of Applied Physics. 7/14/2024, Vol. 136 Issue 2, p1-5. 5p. |
مصطلحات موضوعية: |
*DISTRIBUTION (Probability theory), *ALUMINUM oxide |
مستخلص: |
Amorphous alumina resistance random-access memory is a promising candidate as a next-generation nonvolatile memory. It is intriguing that the nonvolatile memory function emerges in only amorphous samples, unlike crystalline samples. We studied local structures of amorphous alumina samples and Al 2 O 3 polycrystalline using atomic pair distribution function measurements. We derived the Al–Al, O–O, and Al–O atomic distances for each sample. By comparing them, we revealed that the subtle difference in the local structure significantly influences the performance of a nonvolatile memory function. [ABSTRACT FROM AUTHOR] |
قاعدة البيانات: |
Academic Search Index |