التفاصيل البيبلوغرافية
| العنوان: |
Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. |
| المؤلفون: |
Li, Jinxiong1 (AUTHOR), Ju, Shanshan1 (AUTHOR), Tang, Yupu1 (AUTHOR), Li, Jiye2 (AUTHOR), Li, Xiao2 (AUTHOR), Tian, Xu1 (AUTHOR), Zhu, Jianzhang1 (AUTHOR), Ge, Qingqin3 (AUTHOR), Lu, Lei2 (AUTHOR), Zhang, Shengdong2 (AUTHOR), Wang, Xinwei1,4 (AUTHOR) wangxw@pkusz.edu.cn |
| المصدر: |
Advanced Functional Materials. 7/10/2024, Vol. 34 Issue 28, p1-11. 11p. |
| مصطلحات موضوعية: |
*INDIUM gallium zinc oxide, *INDIUM oxide, *ATOMIC layer deposition, *TRANSISTORS, *FLUORINATION, *THIN film transistors, *INDIUM, *POLYCRYSTALLINE silicon |
| مستخلص: |
A low‐thermal‐budget fabrication approach is developed to realize high‐performance fluorine‐doped indium oxide (In2O3:F) thin‐film transistors (TFTs) with remarkable bias‐stress stability. The ultrathin transistor channel layer is prepared by a re‐developed atomic layer deposition (ALD) process of using cyclopentadienyl indium(I) (InCp) and O2 plasma to deposit a crystalline In2O3 film, followed by a new fluorine doping strategy to use CF4 plasma to afford the In2O3:F layer. As revealed by the density functional theory (DFT) analysis, the fluorine doping can stabilize the lattice oxygen and electrically passivate the problematic VO defects in In2O3 by forming the FOFi spectator defects. Therefore, the fabricated In2O3:F TFTs show simultaneously excellent electrical performance and remarkable bias‐stress stability, with high µFE of 35.9 cm2 V−1 s−1, positive Vth of 0.36 V, steep SS of 94.3 mV dec−1, small hysteresis of 33 mV, and small ΔVth of −111 and 49 mV under NBS and PBS, respectively. This work demonstrates the high promise of the fluorinated ALD In2O3:F TFTs for the CMOS back‐end‐of‐line (BEOL) compatible technologies toward advanced monolithic 3D integration. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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