التفاصيل البيبلوغرافية
| العنوان: |
Nanoscale ferroelectric domain switching and thickness scaling impact in undoped hafnium-oxide ferroelectric devices. |
| المؤلفون: |
Fan, Chia-Chi1 (AUTHOR), Chen, Hsuan-Han2 (AUTHOR), Liao, Ruo-Yin2 (AUTHOR), Chou, Wu-Ching2 (AUTHOR), Huang, Ching-Chien3 (AUTHOR), Hsu, Hsiao-Hsuan4 (AUTHOR), Han, Su-Ting5 (AUTHOR), Cheng, Chun-Hu1,6 (AUTHOR) chcheng@ntnu.edu.tw |
| المصدر: |
Thin Solid Films. Jun2024, Vol. 799, pN.PAG-N.PAG. 1p. |
| مصطلحات موضوعية: |
*FERROELECTRIC devices, *THIN film transistors, *STRAINS & stresses (Mechanics), *FERROELECTRIC polymers, *CRYSTALLINE interfaces, *HAFNIUM oxide, *HYSTERESIS |
| مستخلص: |
• Nanoscale ferroelectric domain switching of undoped HfO 2 were investigated. • Well-controlled thermal stress can enhance polarization strength of undoped HfO 2. • Ferroelectric negative capacitance effect can be improved by thickness scaling. • Undoped HfO 2 NCFET with tight hysteresis distribution can be achieved. In this work, we investigated the polarization characteristics of nanoscale undoped hafnium oxide (HfO 2) ferroelectric film. The nanoscale domain switching behavior of undoped HfO 2 is mainly dominated by mixed ferroelectric/nonferroelectric crystalline phases and interface domain pinning by oxygen vacancies or defect traps. Our experimental results confirm that these issues can be improved by film thickness scaling and well-controlled mechanical stress. We demonstrated a 4-nm-thick undoped HfO 2 negative capacitance thin film transistor (NCFET) with an energy-efficient switch characteristic of a low overdrive voltage of -0.6 V, a steep subthreshold swing of sub-60 mV/dec and a uniform hysteresis distribution of sub-60 mV. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
Academic Search Index |