التفاصيل البيبلوغرافية
| العنوان: |
Deterministic creation of strained color centers in nanostructures via high-stress thin films. |
| المؤلفون: |
Assumpcao, D. R.1 (AUTHOR), Jin, C.1 (AUTHOR), Sutula, M.2 (AUTHOR), Ding, S. W.1 (AUTHOR), Pham, P.1 (AUTHOR), Knaut, C. M.2 (AUTHOR), Bhaskar, M. K.2,3 (AUTHOR), Panday, A.1 (AUTHOR), Day, A. M.1 (AUTHOR), Renaud, D.1 (AUTHOR), Lukin, M. D.2 (AUTHOR), Hu, E.1 (AUTHOR), Machielse, B.2,3 (AUTHOR), Loncar, M.1 (AUTHOR) loncar@seas.harvard.edu |
| المصدر: |
Applied Physics Letters. 12/11/2023, Vol. 123 Issue 24, p1-6. 6p. |
| مصطلحات موضوعية: |
*DIAMOND thin films, *THIN films, *INFORMATION technology, *NANOSTRUCTURES, *HIGH temperatures |
| مستخلص: |
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼ 4 × 10 − 4 . Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
Academic Search Index |