التفاصيل البيبلوغرافية
| العنوان: |
Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers. |
| المؤلفون: |
Xiao-Chuan Deng1,2, Xi-Xi Chen1, Cheng-Zhan Li3, Hua-Jun Shen4, Jin-Ping Zhang1 |
| المصدر: |
Chinese Physics B. Aug2016, Vol. 25 Issue 8, p1-1. 1p. |
| مصطلحات موضوعية: |
*HIGH voltages, *ELECTRIC potential, *ELECTRIC currents, *ELECTRICITY, *SUPPLY & demand |
| مستخلص: |
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study. Three geometrical parameters, i.e., mesa height, mesa angle and mesa bottom corner, are investigated by numerical simulation. The simulation results show that a deep mesa height, a small mesa angle and a smooth mesa bottom (without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution. Moreover, an optimized mesa structure without sub-trench (mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated. A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm2 are obtained from the fabricated diode with a 30-μm thick N− epi-layer, corresponding to 85% of the ideal parallel-plane value. The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. [ABSTRACT FROM AUTHOR] |
| قاعدة البيانات: |
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