Resin and photoresist composition comprising the same

التفاصيل البيبلوغرافية
العنوان: Resin and photoresist composition comprising the same
Patent Number: 9,507,258
تاريخ النشر: November 29, 2016
Appl. No: 13/290558
Application Filed: November 07, 2011
مستخلص: The present invention provides a resin comprising a structural unit represented by the formula (aa): [chemical expression included] wherein T1 represents a C4-C34 sultone ring group optionally having one or more substituents, X1 represents —O— or —N(Rc)—, Rc represents a hydrogen atom or a C1-C6 alkyl group, Z1 represents *-X2—, *-X2—X4—CO—X3—, or *-X2—CO—X4—X3—, X2 and X3 independently each represent a C1-C6 alkanediyl group, X4 represents —O— or —N(Rc)—, * represents a binding position to X1, and R1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom.
Inventors: Ichikawa, Koji (Osaka, JP); Shimada, Masahiko (Osaka, JP); Nishimura, Takashi (Osaka, JP)
Assignees: SUMITOMO CHEMICAL COMPANY, LIMITED (Tokyo, JP)
Claim: 1. A resin comprising a structural unit represented by the formula (aa): [chemical expression included] wherein T 1 represents a group represented by the formula (T1): [chemical expression included] wherein X 11 , X 12 and X 13 independently each represent —O—, —S— or —CH 2 —, one or two hydrogen atoms in —CH 2 — in the formula (T1) may be replaced by a halogen atom, a hydroxyl group, a cyano group, C1-C12 alkyl group optionally having a halogen atom or a hydroxyl group, a C1-C12 alkoxy group, C6-C12 aryl group, a C7-C12 aralkyl group, a glycidyloxy group, a C2-C12 alkoxycarbonyl group or a C2-C4 acyl group, and * represents a binding position to —O—, in the formula (aa), X 1 represents —O— or —N(R c)—, R c represents a hydrogen atom or a C1-C6 alkyl group, Z 1 represents a C1-C6 alkanediyl group and R 1 represents a C1-C6 alkyl group optionally having one or more halogen atoms, a hydrogen atom or a halogen atom.
Claim: 2. The resin according to claim 1 , wherein the resin is one being insoluble or poorly soluble in an aqueous alkali solution but becoming soluble in an aqueous alkali solution by the action of an acid.
Claim: 3. A photoresist composition comprising the resin according to claim 2 and an acid generator.
Claim: 4. The photoresist composition according to claim 3 , which further comprises a solvent.
Claim: 5. The photoresist composition according to claim 3 , which further comprises a basic compound.
Claim: 6. The photoresist composition according to claim 4 , which further comprises a basic compound.
Claim: 7. A process for producing a photoresist pattern comprising: (1) a step of applying the photoresist composition according to claim 3 , claim 4 , claim 5 or claim 6 on a substrate to form a photoresist composition layer, (2) a step of fainting a photoresist film by drying the photoresist composition layer formed, (3) a step of exposing the photoresist film to radiation, (4) a step of heating the photoresist film after exposing, and (5) a step of developing the photoresist film after heating.
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Other References: Crivello et al., Journal of Polymer Science, Part A, Polymer Chemistry, vol. 37, 1999, pp. 4241-4254. cited by applicant
U.S. Final Rejection dated Sep. 27, 2013 for U.S. Appl. No. 13/290,618. cited by applicant
U.S. Office Action dated Apr. 19, 2013 for U.S. Appl. No. 13/290,618. cited by applicant
U.S. Office Action dated Jul. 26, 2013 for U.S. Appl. No. 13/443,155. cited by applicant
Taiwanese Office Action and Search Report, issued May 13, 2015, for Taiwanese Application No. 100140496, along with English translations. cited by applicant
Assistant Examiner: Cepluch, Alyssa L
Primary Examiner: Kelly, Cynthia H
Attorney, Agent or Firm: Birch, Stewart, Kolasch & Birch, LLP
رقم الانضمام: edspgr.09507258
قاعدة البيانات: USPTO Patent Grants