Patent
Semiconductor light emitting device and fabrication method of the same
| العنوان: | Semiconductor light emitting device and fabrication method of the same |
|---|---|
| Patent Number: | 7,745,833 |
| تاريخ النشر: | June 29, 2010 |
| Appl. No: | 11/195528 |
| Application Filed: | August 01, 2005 |
| مستخلص: | The invention provides a semiconductor light emitting device and the fabrication method of the same. The semiconductor light emitting device according to the invention comprises a multi-layer light emitting structure and a heat conducting layer. The multi-layer light emitting structure comprises a first layer. The first layer has an exposed first surface, and it also has a first thermal conductivity. The heat conducting layer is formed on and covers the first layer. The heat conducting layer has a second thermal conductivity, wherein the second thermal conductivity is greater than the first thermal conductivity. |
| Inventors: | Yang, Cheng-Chung (Huatan Township, Changhua County, TW); Ma, Shao-Kun (Donggang Township, Pingtung County, TW); Tu, Chuan-Cheng (Taipei, TW); Wu, Jen-Chau (Hsinchu, TW) |
| Assignees: | Epistar Corporation (Hsinchu, TW) |
| Claim: | 1. A semiconductor light emitting device, comprising: a multi-layer light emitting structure, the multi-layer light emitting structure comprising a first conductivity type GaN layer with a first thermal conductivity; and a heat conducting layer with a second thermal conductivity, the heat conducting layer being formed on the first conductivity type GaN layer; wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer. |
| Claim: | 2. The semiconductor light emitting device of claim 1 , wherein the multi-layer light emitting structure further comprising: a substrate; a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate; an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer; a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer; wherein the first conductivity type GaN layer is formed on the active layer. |
| Claim: | 3. The semiconductor light emitting device of claim 2 , wherein the multi-layer light emitting structure further comprises a transparent conductive layer being formed between the first conductivity type GaN layer and the second electrode. |
| Claim: | 4. The semiconductor light emitting device of claim 1 , wherein the heat conducting layer is a distributed Bragg reflector. |
| Claim: | 5. A semiconductor light emitting device, comprising: a multi-layer light emitting structure, the multi-layer light emitting structure comprising a transparent conductive layer with a first thermal conductivity; and a heat conducting layer with a second thermal conductivity, the heat conducting layer being formed on the transparent conductive layer; wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer. |
| Claim: | 6. The semiconductor light emitting device of the claim 5 , wherein the multi-layer light emitting structure further comprising: a substrate; a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate; an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer; a first conductivity type GaN layer, the first conductivity type GaN layer being formed on the active layer; a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer; wherein the transparent conductive layer is formed between the first conductivity type GaN layer and the second electrode. |
| Claim: | 7. The semiconductor light emitting device of claim 5 , wherein the heat conducting layer is a distributed Bragg reflector. |
| Claim: | 8. A semiconductor light emitting device, comprising: a multi-layer light emitting structure, the multi-layer light emitting structure comprising a first layer with a first thermal conductivity; and a heat conducting layer with a second thermal conductivity under the first layer; wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer. |
| Claim: | 9. The semiconductor light emitting device of claim 8 , wherein the first layer is a substrate, the multi-layer light emitting structure further comprising: a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate; an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer; a first conductivity type GaN, the first conductivity type GaN layer being formed on the active layer; a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer. |
| Claim: | 10. The semiconductor light emitting device of claim 9 , wherein the multi-layer light emitting structure further comprises a transparent conductive layer formed between the first conductivity type GaN layer and the second electrode. |
| Claim: | 11. The semiconductor light emitting device of claim 8 , wherein the first layer is a first conductivity type GaN layer, the multi-layer light emitting structure further comprising: a substrate; a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate; an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer; a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer; wherein the first conductivity type GaN layer is formed on the active layer. |
| Claim: | 12. The semiconductor light emitting device of the claim 8 , wherein the first layer is a transparent conductive layer, the multi-layer light emitting structure further comprising: a substrate; a second conductivity type GaN layer, the second conductivity type GaN layer being formed on the substrate; an active layer, the active layer being formed on a first part of the surface of the second conductivity type GaN layer; a first conductivity type GaN, the first conductivity type GaN layer being formed on the active layer; a first electrode, the first electrode being formed on a second part of the surface of the second conductivity type GaN layer; and a second electrode, the second electrode being formed on a part of the surface of the first conductivity type GaN layer; wherein the transparent conductive layer is formed between the first conductivity type GaN layer and the second electrode. |
| Claim: | 13. The semiconductor light emitting device of claim 8 , wherein the heat conducting layer is a distributed Bragg reflector. |
| Current U.S. Class: | 257/81 |
| Patent References Cited: | 6541293 April 2003 Koide et al. 2004/0041160 March 2004 Zhao et al. |
| Primary Examiner: | Trinh, Hoa B |
| Attorney, Agent or Firm: | Morris, Manning & Martin LLP Xia, Tim Tingkang |
| رقم الانضمام: | edspgr.07745833 |
| قاعدة البيانات: | USPTO Patent Grants |
كن أول من يترك تعليقا!