Patent
Thermophotovoltaic energy conversion device
| العنوان: | Thermophotovoltaic energy conversion device |
|---|---|
| Patent Number: | 5,753,050 |
| تاريخ النشر: | May 19, 1998 |
| Appl. No: | 08/703,156 |
| Application Filed: | August 29, 1996 |
| مستخلص: | A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used. |
| Inventors: | Charache, Greg W. (Clifton Park, NY); Baldasaro, Paul F. (Clifton Park, NY); Egley, James L. (Burnt Hills, NY) |
| Assignees: | The United States of America as represented by the Department of Energy (Washington, DC) |
| Claim: | What is claimed is |
| Claim: | 1. A thermophotovoltaic energy conversion device comprising |
| Claim: | a substrate formed from an n-type semiconductor material, the substrate having a top surface and bottom surface; |
| Claim: | a tunnel junction formed on the top surface of the substrate, the tunnel junction having a top surface; |
| Claim: | a region of active layers formed on the top surface of the tunnel junction; and |
| Claim: | a back surface reflector formed on the bottom surface of the substrate. |
| Claim: | 2. A thermophotovoltaic energy conversion device according to claim 1, wherein the tunnel junction has two layers, a layer of heavily doped n-type semiconductor material formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on top of the heavily doped n-type semiconductor material layer. |
| Claim: | 3. A thermophotovoltaic energy conversion device according to claim 2, wherein the tunnel junction includes a pseudomorphic layer of n-type or p-type semiconductor material formed between the heavily doped n-type semiconductor material and the heavily doped p-type material. |
| Claim: | 4. A thermophotovoltaic energy conversion device according to claim 1, wherein the region of active layers has two layers, a base layer of p-type semiconductor material formed on the top surface of the tunnel junction and an emitter layer of n-type semiconductor material formed on top of the base layer. |
| Claim: | 5. A thermophotovoltaic energy conversion device according to claim 3, wherein a front surface window layer is formed on top of the emitter layer of the region of active layers. |
| Claim: | 6. A thermophotovoltaic energy conversion device according to claim 5, wherein an interference filter is formed on top of the front surface window layer. |
| Claim: | 7. A thermophotovoltaic energy conversion device according to claim 3, wherein an interference filter is formed on top of the emitter layer of the region of active layers. |
| Claim: | 8. A thermophotovoltaic energy conversion device according to claim 1 wherein graded layers of n-type semiconductor material are formed on the top surface of the substrate between the substrate and the tunnel junction. |
| Claim: | 9. A thermophotovoltaic energy conversion device according to claim 1, wherein a back surface field layer of n-type semiconductor material is formed on the top surface of the tunnel junction between the tunnel junction and the region of active layers. |
| Claim: | 10. A method of making a thermophotovoltaic energy conversion device, the method comprising the steps of |
| Claim: | forming a substrate from an n-type semiconductor material, the substrate having a top surface and a bottom surface; |
| Claim: | forming a tunnel junction on the top surface of the substrate, the tunnel junction having a top surface; |
| Claim: | forming a region of active layers on the top surface of the tunnel junction; and |
| Claim: | forming a back surface reflector on the bottom surface of the substrate. |
| Claim: | 11. The method according to claim 10, wherein the tunnel junction is formed using the step of forming two layers, a layer of heavily doped n-type semiconductor material being formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material being formed on top of the heavily doped n-type semiconductor material layer. |
| Claim: | 12. A method according to claim 11, wherein the tunnel junction is formed using the step of forming a pseudomorphic layer of n-type or p-type semiconductor material between the heavily doped layer of n-type semiconductor material and the heavily doped layer of p-type semiconductor material. |
| Claim: | 13. The method according to claim 10, wherein the region of active layers is formed using the step of forming two layers, a base layer of p-type semiconductor material being formed on the top surface of the tunnel junction and an emitter layer of n-type semiconductor material being formed on top of the base layer. |
| Claim: | 14. A method according to claim 10, further comprising the step of forming graded layers of n-type semiconductor materials on the top surface of the substrate between the substrate and the tunnel junction. |
| Claim: | 15. A method according to claim 10, further comprising the step of forming a back surface field layer of an n-type semiconductor material on the top surface of the tunnel junction between the tunnel junction and the region of active layers. |
| Claim: | 16. A method according to claim 10, wherein the region of active layers includes an emitter layer, the method further comprising the step of forming an interference filter on top of the emitter layer. |
| Claim: | 17. A method according to claim 10, wherein the region of active layers includes an emitter layer, the method further comprising the step of forming a front surface window layer on top of the emitter layer. |
| Claim: | 18. A method according to claim 17, further comprising the step of forming an interference filter on top of the front surface window layer. |
| Current U.S. Class: | 136/255; 136/253; 136/259; 136/262; 257/436; 438/77; 438/87 |
| Current International Class: | H01L 3106; H01L 3118 |
| Patent References Cited: | 4764104 August 1988 Nelson 5407491 April 1995 Freunduch et al. 5626687 May 1997 Campbell |
| Other References: | H. Kostlin et al., "Thin-Film Reflection Filters", Philips Tech. Review, 225, (1983). P.F. Baldasaro et al., "Experimental Assessment of Low Temperature Voltaic Energy Conversion", AIP Conference Proceedings, 321, 29 (1995). J.C. Zolper et al., "GaAsSb-Based Heterojunction Tunnel Diodes for Tandem Solar Cell Interconnects", First WCPEC, 1994, pp. 1843-1846. M.P. Mikhailova et al., "Type II Heterojunction in the GaInAsSb/GaSb System", Semiconductor Science Technology, 9, (1994), pp. 1279-1295. E. Yablonovich et al., "Extreme Selectivity in the Lift-Off of Epitaxial GaAs Films", Applied Physics Letters 51, 2222, (1987). D.M. Wilt et al., "Peeled Film GaAs Solar Cell Development", IEEE PVSC, 111, (1990). R.W. McClelland et al., "A Technique for Producing Epitaxial Films on Reusable Substrates", Applied Physics Letters 37, 560, (1980). R.P. Gale et al., "High Efficiency Thin Film AIGaAs-GaAs Double Heterojunction Solar Cells", IEEE PVSC, 446, (1988). G.B. Lush et al., "Thin Film GaAs Solar Cells by Epitaxial Lift-off", IEEE PVSC, 1343, (1993). |
| Primary Examiner: | Weisstuch, Aaron |
| Attorney, Agent or Firm: | Caress, Virginia B. Moser, William R. Gottlieb, Paul A. |
| رقم الانضمام: | edspgr.05753050 |
| قاعدة البيانات: | USPTO Patent Grants |
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