Patent
Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same
| العنوان: | Wideband anti-reflection coating for indium antimonide photodetector device and method of forming the same |
|---|---|
| Patent Number: | 5,262,633 |
| تاريخ النشر: | November 16, 1993 |
| Appl. No: | 07/934,136 |
| Application Filed: | August 21, 1992 |
| مستخلص: | A four-layer, wideband anti-reflection coating (30) is formed on a light-receiving surface (22) of an indium antimonide (InSb) photodetector (10) to enable detection of light at visible as well as infrared wavelengths. The layers (30a,30b,30c,30d) each have an optical thickness of approximately one-quarter wavelength at a reference wavelength of 1.6 microns. The refractive indices of the layers (30a,30b,30c,30d) are stepped down from the surface (22), having values of approximately 3.2/2.6/1.9/1.45 respectively. The second layer (30b) is preferably formed of silicon suboxide (SiO.sub.0 |
| Inventors: | Kasai, Ichiro (Solvang, CA); Hettich, Herbert L. (Goleta, CA); Lawrence, Stephen L. (Santa Barbara, CA); Randolph, James E. (San Luis Obispo, CA) |
| Assignees: | Santa Barbara Research Center (Goleta, CA) |
| Claim: | We claim |
| Claim: | 1. An anti-reflection coating for a light-receiving surface of a photodetector device, comprising |
| Claim: | a first substantially transparent layer which is formed over said surface and has an optical thickness of approximately .lambda..sub.0 /4, where .lambda..sub.0 is a predetermined reference wavelength, and an index of refraction between approximately 3.2 and 3.3; |
| Claim: | a second substantially transparent layer which is formed over the first layer and has an optical thickness of approximately .lambda..sub.0 /4, and an index of refraction between approximately 2.6 and 2.7; |
| Claim: | a third substantially transparent layer which is formed over the second layer and has an optical thickness of approximately .lambda..sub.0 /4 and an index of refraction between approximately 1.9 and 2.0; and |
| Claim: | a fourth substantially transparent layer which is formed over the third layer and has an optical thickness of approximately .lambda..sub.0 /4 and an index of refraction between approximately 1.4 and 1.5. |
| Claim: | 2. A coating as in claim 1, in which the first layer comprises a material selected from the group consisting of silicon (Si) and germanium (Ge). |
| Claim: | 3. A coating as in claim 1, in which the first layer comprises silicon (Si) and has a physical thickness of approximately 1,170 .ANG.. |
| Claim: | 4. A coating as in claim 1, in which the second layer comprises a material selected from the group consisting of silicon suboxide (SiO.sub.0 |
| Claim: | 5. A coating as in claim 1, in which the second layer comprises silicon suboxide (SiO.sub.0 |
| Claim: | 6. A coating as in claim 1, in which the third layer comprises a material selected from the group consisting of silicon monoxide (SiO), hafnium oxide (HfO.sub.2), bismuth oxide (Bi.sub.2 O.sub.3), zirconium oxide (ZrO.sub.2), yttrium oxide (Y.sub.2 O.sub.3) and cadmium telluride oxide (CdTeO.sub.3). |
| Claim: | 7. A coating as in claim 1, in which the third layer comprises silicon monoxide (SiO) and has a physical thickness of approximately 2,000 .ANG.. |
| Claim: | 8. A coating as in claim 1, in which the fourth layer comprises a material selected from the group consisting of silicon dioxide (SiO.sub.2), magnesium fluoride (MgF.sub.2) and calcium fluoride (CaF.sub.2). |
| Claim: | 9. A coating as in claim 1, in which the fourth layer comprises silicon dioxide (SiO.sub.2) and has a physical thickness of approximately 2,400 .ANG.. |
| Claim: | 10. A coating as in claim 1, further comprising a passivation layer formed on said surface underlying the first layer, the passivation layer comprising a material selected from the group consisting of silicon (Si), silicon monoxide (SiO), silicon dioxide (SiO.sub.2), silicon suboxide (SiO.sub.0 |
| Claim: | 11. A coating as in claim 1, in which the passivation layer comprises germanium and has a physical thickness between approximately 50 .ANG. and 150 .ANG.. |
| Claim: | 12. A coating as in claim 1, in which .lambda..sub.0 is approximately 1.6 microns. |
| Claim: | 13. A photodetector device, comprising |
| Claim: | an indium antimonide (InSb) photodetector having a light-receiving surface; and |
| Claim: | an anti-reflection coating which is formed on said surface and includes |
| Claim: | 14. A device as in claim 13, in which the first layer comprises a material selected from the group consisting of silicon (Si) and germanium (Ge). |
| Claim: | 15. A device as in claim 13 in which the first layer comprises silicon (Si) and has a physical thickness of approximately 1,170 .ANG.. |
| Claim: | 16. A device as in claim 13, in which the second layer comprises a material selected from the group consisting of silicon suboxide (SiO.sub.0 |
| Claim: | 17. A device as in claim 13, in which the second layer comprises silicon suboxide (SiO.sub.0 |
| Claim: | 18. A device as in claim 13, in which the third layer comprises a material selected from the group consisting of silicon monoxide (SiO), hafnium oxide (HfO.sub.2), bismuth oxide (Bi.sub.2 O.sub.3), zirconium oxide (ZrO.sub.2), yttrium oxide (Y.sub.2 O.sub.3) and cadmium telluride oxide (CdTeO.sub.3). |
| Claim: | 19. A device as in claim 13, in which the third layer comprises silicon monoxide (SiO) and has a physical thickness of approximately 2,000 .ANG.. |
| Claim: | 20. A device as in claim 13, in which the fourth layer comprises a material selected from the group consisting of silicon dioxide (SiO.sub.2), magnesium fluoride (MgF.sub.2) and calcium fluoride (CaF.sub.2). |
| Claim: | 21. A device as in claim 13, in which the fourth layer comprises silicon dioxide (SiO.sub.2) and has a physical thickness of approximately 2,400 .ANG.. |
| Claim: | 22. A device as in claim 13, further comprising a passivation layer formed on said surface underlying the first layer, the passivation layer comprising a material selected from the group consisting of silicon (Si), silicon monoxide (SiO), silicon dioxide (SiO.sub.2), silicon suboxide (SiO.sub.0 |
| Claim: | 23. A device as in claim 22, in which the passivation layer has a physical thickness between approximately 50 .ANG. and 150 .ANG.. |
| Claim: | 24. A coating as in claim 13, in which .lambda..sub.0 is approximately 1.6 microns. |
| Current U.S. Class: | 2502/081; 257/437; 359/588; 250/216; 250/226 |
| Current International Class: | H01J 4014 |
| Patent References Cited: | 3463574 August 1969 Bastein et al. 3854796 December 1974 Thelen 4528418 July 1985 McGill |
| Primary Examiner: | Nelms, David C. |
| Assistant Examiner: | Shami, K. |
| Attorney, Agent or Firm: | Schubert, W. C. Denson-Low, W. K. |
| رقم الانضمام: | edspgr.05262633 |
| قاعدة البيانات: | USPTO Patent Grants |
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edspgr USPTO Patent Grants edspgr.05262633 699 3 Patent patent 699.374450683594 |
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https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edspgr&AN=edspgr.05262633&custid=s6537998&authtype=sso |
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Array ( [Name] => DocumentID [Label] => Patent Number [Group] => Patent [Data] => 5,262,633 ) Array ( [Name] => DateEntry [Label] => Publication Date [Group] => Patent [Data] => November 16, 1993 ) Array ( [Name] => DocumentID [Label] => Appl. No [Group] => Patent [Data] => 07/934,136 ) Array ( [Name] => DateFiled [Label] => Application Filed [Group] => Patent [Data] => August 21, 1992 ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => A four-layer, wideband anti-reflection coating (30) is formed on a light-receiving surface (22) of an indium antimonide (InSb) photodetector (10) to enable detection of light at visible as well as infrared wavelengths. The layers (30a,30b,30c,30d) each have an optical thickness of approximately one-quarter wavelength at a reference wavelength of 1.6 microns. The refractive indices of the layers (30a,30b,30c,30d) are stepped down from the surface (22), having values of approximately 3.2/2.6/1.9/1.45 respectively. The second layer (30b) is preferably formed of silicon suboxide (SiO.sub.0 ) Array ( [Name] => Author [Label] => Inventors [Group] => Patent [Data] => <searchLink fieldCode="ZA" term="%22Kasai%2C+Ichiro%22">Kasai, Ichiro</searchLink> (Solvang, CA); <searchLink fieldCode="ZA" term="%22Hettich%2C+Herbert+L%2E%22">Hettich, Herbert L.</searchLink> (Goleta, CA); <searchLink fieldCode="ZA" term="%22Lawrence%2C+Stephen+L%2E%22">Lawrence, Stephen L.</searchLink> (Santa Barbara, CA); <searchLink fieldCode="ZA" term="%22Randolph%2C+James+E%2E%22">Randolph, James E.</searchLink> (San Luis Obispo, CA) ) Array ( [Name] => OtherAuthors [Label] => Assignees [Group] => Patent [Data] => <searchLink fieldCode="ZS" term="%22Santa+Barbara+Research+Center%22">Santa Barbara Research Center</searchLink> (Goleta, CA) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => We claim ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 1. An anti-reflection coating for a light-receiving surface of a photodetector device, comprising ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => a first substantially transparent layer which is formed over said surface and has an optical thickness of approximately .lambda..sub.0 /4, where .lambda..sub.0 is a predetermined reference wavelength, and an index of refraction between approximately 3.2 and 3.3; ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => a second substantially transparent layer which is formed over the first layer and has an optical thickness of approximately .lambda..sub.0 /4, and an index of refraction between approximately 2.6 and 2.7; ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => a third substantially transparent layer which is formed over the second layer and has an optical thickness of approximately .lambda..sub.0 /4 and an index of refraction between approximately 1.9 and 2.0; and ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => a fourth substantially transparent layer which is formed over the third layer and has an optical thickness of approximately .lambda..sub.0 /4 and an index of refraction between approximately 1.4 and 1.5. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 2. A coating as in claim 1, in which the first layer comprises a material selected from the group consisting of silicon (Si) and germanium (Ge). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 3. A coating as in claim 1, in which the first layer comprises silicon (Si) and has a physical thickness of approximately 1,170 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 4. A coating as in claim 1, in which the second layer comprises a material selected from the group consisting of silicon suboxide (SiO.sub.0<X<1), cadmium telluride (CdTe), silicon carbide (SiC) and silicon nitride (Si.sub.3 N.sub.4). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 5. A coating as in claim 1, in which the second layer comprises silicon suboxide (SiO.sub.0<X<1) and has a physical thickness of approximately 1,300 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 6. A coating as in claim 1, in which the third layer comprises a material selected from the group consisting of silicon monoxide (SiO), hafnium oxide (HfO.sub.2), bismuth oxide (Bi.sub.2 O.sub.3), zirconium oxide (ZrO.sub.2), yttrium oxide (Y.sub.2 O.sub.3) and cadmium telluride oxide (CdTeO.sub.3). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 7. A coating as in claim 1, in which the third layer comprises silicon monoxide (SiO) and has a physical thickness of approximately 2,000 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 8. A coating as in claim 1, in which the fourth layer comprises a material selected from the group consisting of silicon dioxide (SiO.sub.2), magnesium fluoride (MgF.sub.2) and calcium fluoride (CaF.sub.2). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 9. A coating as in claim 1, in which the fourth layer comprises silicon dioxide (SiO.sub.2) and has a physical thickness of approximately 2,400 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 10. A coating as in claim 1, further comprising a passivation layer formed on said surface underlying the first layer, the passivation layer comprising a material selected from the group consisting of silicon (Si), silicon monoxide (SiO), silicon dioxide (SiO.sub.2), silicon suboxide (SiO.sub.0<X<1), silicon nitride (Si.sub.3 N.sub.4), germanium (Ge), cadmium telluride (CdTe) and gallium arsenide (GaAs). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 11. A coating as in claim 1, in which the passivation layer comprises germanium and has a physical thickness between approximately 50 .ANG. and 150 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 12. A coating as in claim 1, in which .lambda..sub.0 is approximately 1.6 microns. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 13. A photodetector device, comprising ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => an indium antimonide (InSb) photodetector having a light-receiving surface; and ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => an anti-reflection coating which is formed on said surface and includes ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 14. A device as in claim 13, in which the first layer comprises a material selected from the group consisting of silicon (Si) and germanium (Ge). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 15. A device as in claim 13 in which the first layer comprises silicon (Si) and has a physical thickness of approximately 1,170 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 16. A device as in claim 13, in which the second layer comprises a material selected from the group consisting of silicon suboxide (SiO.sub.0<X<1), cadmium telluride (CdTe), silicon carbide (SiC) and silicon nitride (Si.sub.3 N.sub.4). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 17. A device as in claim 13, in which the second layer comprises silicon suboxide (SiO.sub.0<X<1) and has a physical thickness of approximately 1,300 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 18. A device as in claim 13, in which the third layer comprises a material selected from the group consisting of silicon monoxide (SiO), hafnium oxide (HfO.sub.2), bismuth oxide (Bi.sub.2 O.sub.3), zirconium oxide (ZrO.sub.2), yttrium oxide (Y.sub.2 O.sub.3) and cadmium telluride oxide (CdTeO.sub.3). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 19. A device as in claim 13, in which the third layer comprises silicon monoxide (SiO) and has a physical thickness of approximately 2,000 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 20. A device as in claim 13, in which the fourth layer comprises a material selected from the group consisting of silicon dioxide (SiO.sub.2), magnesium fluoride (MgF.sub.2) and calcium fluoride (CaF.sub.2). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 21. A device as in claim 13, in which the fourth layer comprises silicon dioxide (SiO.sub.2) and has a physical thickness of approximately 2,400 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 22. A device as in claim 13, further comprising a passivation layer formed on said surface underlying the first layer, the passivation layer comprising a material selected from the group consisting of silicon (Si), silicon monoxide (SiO), silicon dioxide (SiO.sub.2), silicon suboxide (SiO.sub.0<X<1), silicon nitride (Si.sub.3 N.sub.4), germanium (Ge), cadmium telluride (CdTe) and gallium arsenide (GaAs). ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 23. A device as in claim 22, in which the passivation layer has a physical thickness between approximately 50 .ANG. and 150 .ANG.. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 24. A coating as in claim 13, in which .lambda..sub.0 is approximately 1.6 microns. ) Array ( [Name] => CodeClass [Label] => Current U.S. Class [Group] => Patent [Data] => 2502/081; 257/437; 359/588; 250/216; 250/226 ) Array ( [Name] => CodeClass [Label] => Current International Class [Group] => Patent [Data] => H01J 4014 ) Array ( [Name] => Ref [Label] => Patent References Cited [Group] => Patent [Data] => 3463574 August 1969 Bastein et al.<br /><searchLink fieldCode="RF" term="%223854796%22">3854796</searchLink> December 1974 Thelen<br /><searchLink fieldCode="RF" term="%224528418%22">4528418</searchLink> July 1985 McGill ) Array ( [Name] => AuthorEditor [Label] => Primary Examiner [Group] => Patent [Data] => <searchLink fieldCode="ZE" term="%22Nelms%2C+David+C%2E%22">Nelms, David C.</searchLink> ) Array ( [Name] => AuthorEditor [Label] => Assistant Examiner [Group] => Patent [Data] => <searchLink fieldCode="ZE" term="%22Shami%2C+K%2E%22">Shami, K.</searchLink> ) Array ( [Name] => AuthorCorporate [Label] => Attorney, Agent or Firm [Group] => Patent [Data] => <searchLink fieldCode="ZG" term="%22Schubert%2C+W%2E+C%2E%22">Schubert, W. C.</searchLink><br /><searchLink fieldCode="ZG" term="%22Denson-Low%2C+W%2E+K%2E%22">Denson-Low, W. K.</searchLink> ) Array ( [Name] => AN [Label] => Accession Number [Group] => ID [Data] => edspgr.05262633 ) |
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