Patent
METHODS AND APPARATUS FOR MEASURING ANALYTES
| العنوان: | METHODS AND APPARATUS FOR MEASURING ANALYTES |
|---|---|
| Document Number: | 20100301398 |
| تاريخ النشر: | December 2, 2010 |
| Appl. No: | 12/475311 |
| Application Filed: | May 29, 2009 |
| مستخلص: | Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. |
| Inventors: | Rothberg, Jonathan M. (Guilford, CT, US); Bustillo, James M. (Castro Valley, CA, US); Milgrew, Mark J. (Branford, CT, US); Schultz, Jonathan C. (Oxford, MA, US); Marran, David (Durham, CT, US); Rearick, Todd M. (Cheshire, CT, US); Johnson, Kim L. (Carlsbad, CA, US) |
| Assignees: | Ion Torrent Systems Incorporated (Guilford, CT, US) |
| Claim: | 1. An apparatus, comprising: an array of sensors, each sensor comprising one chemically-sensitive field effect transistor (chemFET), said chemFET having a floating gate structure; a layer of first material disposed over the sensor array and having formed therein a plurality of microwells, each microwell forming a cavity disposed over at least one of the chemFETS for receiving fluid analyte therein; and a layer of protection material on said floating gate structure to separate the material of the floating gate from the analyte, wherein the layer of protection material has a thickness over the floating gate structure of up to about 600 Angstroms. |
| Claim: | 2. The apparatus of claim 1, wherein the layer of protection material has a thickness over the floating gate of up to about 400 Angstroms. |
| Claim: | 3. The apparatus of claim 1, wherein the chemFETs are CMOS devices, and the protective layer of material comprises one or more layers of a CMOS passivation material. |
| Claim: | 4. The apparatus of claim 3, wherein at least one layer of said passivation material is a metal oxide or metal nitride. |
| Claim: | 5. The apparatus of claim 4, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. |
| Claim: | 6. (canceled) |
| Claim: | 7. The apparatus of claim 1, wherein the layer of first material and the layer of protection material comprise a single layer of material which has a thickness in areas not over the floating gate structures sufficient to form the microwells over the floating gate structures. |
| Claim: | 8. The apparatus of claim 7, wherein the chemFETs are CMOS devices and the single layer of material comprises a CMOS process passivation material which is up to about 600 Angstroms thick over the floating gate structure and forms microwells at least about 1 μm deep. |
| Claim: | 9. The apparatus of claim 1, wherein the protection layer also covers the sidewalls of the microwells. |
| Claim: | 10. The apparatus of claim 9, wherein the protection layer has a pKa value that is closer to the analyte pH conditions than is the pKa value of the first material. |
| Claim: | 11. (canceled) |
| Claim: | 12. A method of forming an array of chemically-sensitive field effect transistors (chemFETs), each said chemFET having a floating gate structure, with a corresponding array of microwells disposed over the floating gate structures, each microwell forming a cavity disposed over the floating gate structure of at least one of the chemFETs for receiving fluid analyte therein, said method comprising: a. providing an array of chemFETs in a semiconductor substrate, the floating gate structures of the chemFETs being covered by a layer of protection material; b. depositing a layer of material over the protection material and removing portions of said material over the floating gate structures to form said microwells therein; and c. removing, if necessary, a portion of said layer of protection material so that a thickness of protection material of no more than about 600 Angstroms remains. |
| Claim: | 13. The method of claim 12, wherein the chemFETs are CMOS devices, and the layer of protection material comprises one or more layers of a CMOS passivation material. |
| Claim: | 14. The method of claim 13, wherein at least one layer of said passivation material is a metal oxide or metal nitride. |
| Claim: | 15. The method of claim 14, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. |
| Claim: | 16. (canceled) |
| Claim: | 17. The method of claim 12, wherein the layer of first material and the layer of protection material comprise a single layer of material which has a thickness in areas not over the floating gate structures sufficient to form the microwells over the floating gate structures. |
| Claim: | 18. The method of claim 17, wherein the chemFETs are CMOS devices and the single layer of material comprises a CMOS process passivation material which is up to about 600 Angstroms thick over the floating gate structure and forms microwells at least about 1 μm deep. |
| Claim: | 19. A method of forming an array of chemically-sensitive field effect transistors (chemFETs), each said chemFET having a floating gate structure, with a corresponding array of microwells disposed over the floating gate structures, each microwell forming a cavity disposed over the floating gate structure of at least one of the chemFETs for receiving fluid analyte therein, said method comprising: a. providing an array of chemFETs in a semiconductor substrate, the floating gate structures of the chemFETs being covered by a layer of protection material; b. substantially completely removing the protection material over the floating gate structures to form cavities in the protection material over the floating gate structures; and c. depositing on the floating gate structures and sidewalls of said cavities a thin layer of a relatively high dielectric constant material and to a thickness of no more than about 600 Angstroms. |
| Claim: | 20. (canceled) |
| Claim: | 21. The method of claim 19, wherein the high dielectric constant material is a metal oxide or metal nitride. |
| Claim: | 22. The method of claim 19, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. |
| Claim: | 23. (canceled) |
| Claim: | 24. The method of claim 19 wherein depositing a thin layer of relatively high dielectric constant material further comprises depositing alternating layers of two materials, a first material exhibiting superior adhesion to the cavity walls than a second material which has a pKa value that is closer to the analyte pH conditions than is the pKa value of the first material. |
| Claim: | 25. The method of claim 24, wherein the first material is Al2O3 and the second material is Ta2O5 and each of the alternating layers is about 10-20 Angstroms thick to a total thickness of up to about 600 Angstroms. |
| Claim: | 26. The method of claim 19 wherein depositing a thin layer of relatively high dielectric constant material further comprises depositing a first, very thin, layer of a material which adheres well to the walls of the cavities and a second, thicker layer of another material which has a pKa value that is close to the analyte pH conditions. |
| Claim: | 27. (canceled) |
| Current U.S. Class: | 257/253 |
| Current International Class: | 01; 01 |
| رقم الانضمام: | edspap.20100301398 |
| قاعدة البيانات: | USPTO Patent Applications |
| ResultId |
1 |
|---|---|
| Header |
edspap USPTO Patent Applications edspap.20100301398 720 3 Patent patent 720.194091796875 |
| PLink |
https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edspap&AN=edspap.20100301398&custid=s6537998&authtype=sso |
| FullText |
Array
(
[Availability] => 0
)
Array ( [0] => Array ( [Url] => https://ppubs.uspto.gov/pubwebapp/external.html?q=(%2220100301398%22).pn.&db=US-PGPUB&type=ids [Name] => EDS - USPTO Patent Applications [Category] => fullText [Text] => View record in USPTO Patent Applications [MouseOverText] => View record in USPTO Patent Applications ) ) |
| Items |
Array
(
[Name] => Title
[Label] => Title
[Group] => Ti
[Data] => METHODS AND APPARATUS FOR MEASURING ANALYTES
)
Array ( [Name] => DocumentID [Label] => Document Number [Group] => Patent [Data] => 20100301398 ) Array ( [Name] => DateEntry [Label] => Publication Date [Group] => Patent [Data] => December 2, 2010 ) Array ( [Name] => DocumentID [Label] => Appl. No [Group] => Patent [Data] => 12/475311 ) Array ( [Name] => DateFiled [Label] => Application Filed [Group] => Patent [Data] => May 29, 2009 ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => Methods and apparatus relating to FET arrays including large FET arrays for monitoring chemical and/or biological reactions such as nucleic acid sequencing-by-synthesis reactions. Some methods provided herein relate to improving signal (and also signal to noise ratio) from released hydrogen ions during nucleic acid sequencing reactions. ) Array ( [Name] => Author [Label] => Inventors [Group] => Patent [Data] => <searchLink fieldCode="ZA" term="%22Rothberg%2C+Jonathan+M%2E%22">Rothberg, Jonathan M.</searchLink> (Guilford, CT, US); <searchLink fieldCode="ZA" term="%22Bustillo%2C+James+M%2E%22">Bustillo, James M.</searchLink> (Castro Valley, CA, US); <searchLink fieldCode="ZA" term="%22Milgrew%2C+Mark+J%2E%22">Milgrew, Mark J.</searchLink> (Branford, CT, US); <searchLink fieldCode="ZA" term="%22Schultz%2C+Jonathan+C%2E%22">Schultz, Jonathan C.</searchLink> (Oxford, MA, US); <searchLink fieldCode="ZA" term="%22Marran%2C+David%22">Marran, David</searchLink> (Durham, CT, US); <searchLink fieldCode="ZA" term="%22Rearick%2C+Todd+M%2E%22">Rearick, Todd M.</searchLink> (Cheshire, CT, US); <searchLink fieldCode="ZA" term="%22Johnson%2C+Kim+L%2E%22">Johnson, Kim L.</searchLink> (Carlsbad, CA, US) ) Array ( [Name] => OtherAuthors [Label] => Assignees [Group] => Patent [Data] => <searchLink fieldCode="ZS" term="%22Ion+Torrent+Systems+Incorporated%22">Ion Torrent Systems Incorporated</searchLink> (Guilford, CT, US) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 1. An apparatus, comprising: an array of sensors, each sensor comprising one chemically-sensitive field effect transistor (chemFET), said chemFET having a floating gate structure; a layer of first material disposed over the sensor array and having formed therein a plurality of microwells, each microwell forming a cavity disposed over at least one of the chemFETS for receiving fluid analyte therein; and a layer of protection material on said floating gate structure to separate the material of the floating gate from the analyte, wherein the layer of protection material has a thickness over the floating gate structure of up to about 600 Angstroms. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 2. The apparatus of claim 1, wherein the layer of protection material has a thickness over the floating gate of up to about 400 Angstroms. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 3. The apparatus of claim 1, wherein the chemFETs are CMOS devices, and the protective layer of material comprises one or more layers of a CMOS passivation material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 4. The apparatus of claim 3, wherein at least one layer of said passivation material is a metal oxide or metal nitride. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 5. The apparatus of claim 4, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 6. (canceled) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 7. The apparatus of claim 1, wherein the layer of first material and the layer of protection material comprise a single layer of material which has a thickness in areas not over the floating gate structures sufficient to form the microwells over the floating gate structures. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 8. The apparatus of claim 7, wherein the chemFETs are CMOS devices and the single layer of material comprises a CMOS process passivation material which is up to about 600 Angstroms thick over the floating gate structure and forms microwells at least about 1 μm deep. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 9. The apparatus of claim 1, wherein the protection layer also covers the sidewalls of the microwells. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 10. The apparatus of claim 9, wherein the protection layer has a pKa value that is closer to the analyte pH conditions than is the pKa value of the first material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 11. (canceled) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 12. A method of forming an array of chemically-sensitive field effect transistors (chemFETs), each said chemFET having a floating gate structure, with a corresponding array of microwells disposed over the floating gate structures, each microwell forming a cavity disposed over the floating gate structure of at least one of the chemFETs for receiving fluid analyte therein, said method comprising: a. providing an array of chemFETs in a semiconductor substrate, the floating gate structures of the chemFETs being covered by a layer of protection material; b. depositing a layer of material over the protection material and removing portions of said material over the floating gate structures to form said microwells therein; and c. removing, if necessary, a portion of said layer of protection material so that a thickness of protection material of no more than about 600 Angstroms remains. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 13. The method of claim 12, wherein the chemFETs are CMOS devices, and the layer of protection material comprises one or more layers of a CMOS passivation material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 14. The method of claim 13, wherein at least one layer of said passivation material is a metal oxide or metal nitride. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 15. The method of claim 14, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 16. (canceled) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 17. The method of claim 12, wherein the layer of first material and the layer of protection material comprise a single layer of material which has a thickness in areas not over the floating gate structures sufficient to form the microwells over the floating gate structures. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 18. The method of claim 17, wherein the chemFETs are CMOS devices and the single layer of material comprises a CMOS process passivation material which is up to about 600 Angstroms thick over the floating gate structure and forms microwells at least about 1 μm deep. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 19. A method of forming an array of chemically-sensitive field effect transistors (chemFETs), each said chemFET having a floating gate structure, with a corresponding array of microwells disposed over the floating gate structures, each microwell forming a cavity disposed over the floating gate structure of at least one of the chemFETs for receiving fluid analyte therein, said method comprising: a. providing an array of chemFETs in a semiconductor substrate, the floating gate structures of the chemFETs being covered by a layer of protection material; b. substantially completely removing the protection material over the floating gate structures to form cavities in the protection material over the floating gate structures; and c. depositing on the floating gate structures and sidewalls of said cavities a thin layer of a relatively high dielectric constant material and to a thickness of no more than about 600 Angstroms. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 20. (canceled) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 21. The method of claim 19, wherein the high dielectric constant material is a metal oxide or metal nitride. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 22. The method of claim 19, wherein the metal oxide or metal nitride is selected from among the group consisting of Al2O3, SiO2, Si3N4, Al2O3, Ta2O5, HfO3, WO3, and a super-Nernstian material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 23. (canceled) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 24. The method of claim 19 wherein depositing a thin layer of relatively high dielectric constant material further comprises depositing alternating layers of two materials, a first material exhibiting superior adhesion to the cavity walls than a second material which has a pKa value that is closer to the analyte pH conditions than is the pKa value of the first material. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 25. The method of claim 24, wherein the first material is Al2O3 and the second material is Ta2O5 and each of the alternating layers is about 10-20 Angstroms thick to a total thickness of up to about 600 Angstroms. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 26. The method of claim 19 wherein depositing a thin layer of relatively high dielectric constant material further comprises depositing a first, very thin, layer of a material which adheres well to the walls of the cavities and a second, thicker layer of another material which has a pKa value that is close to the analyte pH conditions. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 27. (canceled) ) Array ( [Name] => CodeClass [Label] => Current U.S. Class [Group] => Patent [Data] => 257/253 ) Array ( [Name] => CodeClass [Label] => Current International Class [Group] => Patent [Data] => 01; 01 ) Array ( [Name] => AN [Label] => Accession Number [Group] => ID [Data] => edspap.20100301398 ) |
| RecordInfo |
Array
(
[BibEntity] => Array
(
[Languages] => Array
(
[0] => Array
(
[Text] => English
)
)
[Titles] => Array
(
[0] => Array
(
[TitleFull] => METHODS AND APPARATUS FOR MEASURING ANALYTES
[Type] => main
)
)
)
[BibRelationships] => Array
(
[HasContributorRelationships] => Array
(
[0] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Rothberg, Jonathan M.
)
)
)
[1] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Bustillo, James M.
)
)
)
[2] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Milgrew, Mark J.
)
)
)
[3] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Schultz, Jonathan C.
)
)
)
[4] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Marran, David
)
)
)
[5] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Rearick, Todd M.
)
)
)
[6] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Johnson, Kim L.
)
)
)
)
[IsPartOfRelationships] => Array
(
[0] => Array
(
[BibEntity] => Array
(
[Dates] => Array
(
[0] => Array
(
[D] => 02
[M] => 12
[Text] => December 2, 2010
[Type] => published
[Y] => 2010
)
)
)
)
)
)
)
|
| IllustrationInfo |