Patent
Interposer and method for manufacturing the same
| العنوان: | Interposer and method for manufacturing the same |
|---|---|
| Document Number: | 20080073110 |
| تاريخ النشر: | March 27, 2008 |
| Appl. No: | 11/902251 |
| Application Filed: | September 20, 2007 |
| مستخلص: | The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16. |
| Inventors: | Shioga, Takeshi (Kawasaki, JP); Kurihara, Kazuaki (Kawasaki, JP); Nakagawa, Kanae (Kawasaki, JP); Sakai, Taiji (Kawasaki, JP); Mizukoshi, Masataka (Kawasaki, JP) |
| Assignees: | FUJITSU LIMITED (Kawasaki, JP) |
| Claim: | 1. An interposer comprising: a glass substrate with a first through-electrode buried in; a plurality of resin layers supported by the glass substrate; a thin film capacitor buried between a first resin layer of said plurality of resin layers and a second resin layer of said plurality of resin layers, the thin film capacitor including a first capacitor electrode, a second capacitor electrode opposed to the first capacitor electrode, and a dielectric thin film of a relative dielectric constant of 200 or above formed between the first capacitor electrode and the second capacitor electrode; and a second through-electrode penetrating said plurality of resin layers, electrically connected to the first through-electrode, and electrically connected to the first capacitor electrode or the second capacitor electrode. |
| Claim: | 2. An interposer according to claim 1, further comprising: another resin layer formed over one primary surface of the glass substrate; and a partial electrode buried in said another resin layer and connected to the first through-electrode, said plurality of resin layers further including a third resin layer, the second through-electrode penetrating the third resin layer, and said another resin layer and the third resin layer being adhered to each other, and the partial electrode and the second through-electrode being connected to each other. |
| Claim: | 3. An interposer according to claim 1, wherein the glass substrate is formed of borosilicate glass. |
| Claim: | 4. An interposer according to claim 1, wherein said another resin layer and the third resin layer are formed of a thermosetting resin which is cured without producing a by-product. |
| Claim: | 5. An interposer according to claim 1, wherein said another resin layer and the third resin layer are formed of benzocyclobutene resin, polyimide resin, epoxy resin, bismaleimide resin, maleimide resin, cyanate resin, polyphenylene ether resin, polyphenylene oxide resin, fluorine-containing resin, liquid crystal polymer, polyether imide resin or polyether etherketone resin. |
| Claim: | 6. An interposer according to claim 1, wherein the first through-electrode is formed of FeNiCo alloy or Au. |
| Claim: | 7. An interposer according to claim 1, wherein the second through-electrode contains at least one of Cu, Ni, Au and Sn. |
| Claim: | 8. An interposer according to claim 1, wherein the dielectric thin film is formed of a composite oxide containing at least one element of Sr, Ba, Pb, Zr, Bi, Ta, Ti, Mg and Nb. |
| Claim: | 9. An interposer according to claim 1, further comprising a passivation layer of an inorganic material formed, covering the thin film capacitor. |
| Claim: | 10. An interposer according to claim 9, wherein the passivation layer is formed of aluminum oxide, silicon dioxide or silicon nitride. |
| Claim: | 11. An interposer according to claim 9, wherein the passivation layer is an amorphous film formed of the same material as the dielectric thin film. |
| Claim: | 12. An interposer according to claim 1, wherein the capacitor electrode is formed of Au, Cr, Cu, W, Pt, Pd, Ru, Ru oxide, Ir, Ir oxide or Pt oxide. |
| Claim: | 13. A method for manufacturing an interposer comprising the steps of: forming over one primary surface of a semiconductor substrate a thin film capacitor including a first capacitor electrode, a crystalline dielectric thin film formed over the first capacitor electrode and a second capacitor electrode formed over the dielectric thin film; forming the first semi-cured resin layer over said one primary surface of the semiconductor substrate and over the thin film capacitor, and a first partial electrode to be a first through-electrode, which is buried in the first resin layer and electrically connected to the first capacitor electrode or the second capacitor electrode; cutting an upper part of the first partial electrode and an upper part of the first resin layer with a cutting tool; forming a second semi-cured resin layer over one primary surface of a glass substrate with a second through-electrode buried in, and a second partial electrode to be a part of the first through-electrode, which is buried in the second resin layer and connected to the second through-electrode; cutting an upper part of the second partial electrode and an upper part of the second resin layer with the cutting tool; making thermal processing with the first resin layer and the second resin layer adhered to each other to adhere the first resin layer and the second resin layer to each other while connecting the first partial electrode and the second partial electrode to each other; removing the semiconductor substrate; forming a third resin layer over said one primary surface of the glass substrate, covering the thin film capacitor; burying a third partial electrode to be the first through-electrode in the third resin layer. |
| Claim: | 14. A method for manufacturing an interposer according to claim 13, wherein in the step of forming the first resin layer, the first resin layer of a thermosetting resin is cured without producing a by-product, and in the step of forming the second resin layer, the second resin layer of a thermosetting resin is cured without producing a by-product. |
| Claim: | 15. A method for manufacturing an interposer according to claim 13, wherein the glass substrate is formed of borosilicate glass. |
| Claim: | 16. A method for manufacturing an interposer according to claim 13, wherein the first resin layer and the second resin layer are formed of benzocyclobutene resin, polyimide resin, epoxy resin, bismaleimide resin, maleimide resin, cyanate resin, polyphenylene ether resin, polyphenylene oxide resin, fluorine-containing resin, liquid crystal polymer, polyether imide resin or polyether etherketone resin. |
| Current U.S. Class: | 174258/000 |
| Current International Class: | 05; 05 |
| رقم الانضمام: | edspap.20080073110 |
| قاعدة البيانات: | USPTO Patent Applications |
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1 |
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| Header |
edspap USPTO Patent Applications edspap.20080073110 718 3 Patent patent 717.880493164063 |
| PLink |
https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edspap&AN=edspap.20080073110&custid=s6537998&authtype=sso |
| FullText |
Array
(
[Availability] => 0
)
Array ( [0] => Array ( [Url] => https://ppubs.uspto.gov/pubwebapp/external.html?q=(%2220080073110%22).pn.&db=US-PGPUB&type=ids [Name] => EDS - USPTO Patent Applications [Category] => fullText [Text] => View record in USPTO Patent Applications [MouseOverText] => View record in USPTO Patent Applications ) ) |
| Items |
Array
(
[Name] => Title
[Label] => Title
[Group] => Ti
[Data] => Interposer and method for manufacturing the same
)
Array ( [Name] => DocumentID [Label] => Document Number [Group] => Patent [Data] => 20080073110 ) Array ( [Name] => DateEntry [Label] => Publication Date [Group] => Patent [Data] => March 27, 2008 ) Array ( [Name] => DocumentID [Label] => Appl. No [Group] => Patent [Data] => 11/902251 ) Array ( [Name] => DateFiled [Label] => Application Filed [Group] => Patent [Data] => September 20, 2007 ) Array ( [Name] => Abstract [Label] => Abstract [Group] => Ab [Data] => The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16. ) Array ( [Name] => Author [Label] => Inventors [Group] => Patent [Data] => <searchLink fieldCode="ZA" term="%22Shioga%2C+Takeshi%22">Shioga, Takeshi</searchLink> (Kawasaki, JP); <searchLink fieldCode="ZA" term="%22Kurihara%2C+Kazuaki%22">Kurihara, Kazuaki</searchLink> (Kawasaki, JP); <searchLink fieldCode="ZA" term="%22Nakagawa%2C+Kanae%22">Nakagawa, Kanae</searchLink> (Kawasaki, JP); <searchLink fieldCode="ZA" term="%22Sakai%2C+Taiji%22">Sakai, Taiji</searchLink> (Kawasaki, JP); <searchLink fieldCode="ZA" term="%22Mizukoshi%2C+Masataka%22">Mizukoshi, Masataka</searchLink> (Kawasaki, JP) ) Array ( [Name] => OtherAuthors [Label] => Assignees [Group] => Patent [Data] => <searchLink fieldCode="ZS" term="%22FUJITSU+LIMITED%22">FUJITSU LIMITED</searchLink> (Kawasaki, JP) ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 1. An interposer comprising: a glass substrate with a first through-electrode buried in; a plurality of resin layers supported by the glass substrate; a thin film capacitor buried between a first resin layer of said plurality of resin layers and a second resin layer of said plurality of resin layers, the thin film capacitor including a first capacitor electrode, a second capacitor electrode opposed to the first capacitor electrode, and a dielectric thin film of a relative dielectric constant of 200 or above formed between the first capacitor electrode and the second capacitor electrode; and a second through-electrode penetrating said plurality of resin layers, electrically connected to the first through-electrode, and electrically connected to the first capacitor electrode or the second capacitor electrode. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 2. An interposer according to claim 1, further comprising: another resin layer formed over one primary surface of the glass substrate; and a partial electrode buried in said another resin layer and connected to the first through-electrode, said plurality of resin layers further including a third resin layer, the second through-electrode penetrating the third resin layer, and said another resin layer and the third resin layer being adhered to each other, and the partial electrode and the second through-electrode being connected to each other. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 3. An interposer according to claim 1, wherein the glass substrate is formed of borosilicate glass. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 4. An interposer according to claim 1, wherein said another resin layer and the third resin layer are formed of a thermosetting resin which is cured without producing a by-product. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 5. An interposer according to claim 1, wherein said another resin layer and the third resin layer are formed of benzocyclobutene resin, polyimide resin, epoxy resin, bismaleimide resin, maleimide resin, cyanate resin, polyphenylene ether resin, polyphenylene oxide resin, fluorine-containing resin, liquid crystal polymer, polyether imide resin or polyether etherketone resin. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 6. An interposer according to claim 1, wherein the first through-electrode is formed of FeNiCo alloy or Au. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 7. An interposer according to claim 1, wherein the second through-electrode contains at least one of Cu, Ni, Au and Sn. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 8. An interposer according to claim 1, wherein the dielectric thin film is formed of a composite oxide containing at least one element of Sr, Ba, Pb, Zr, Bi, Ta, Ti, Mg and Nb. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 9. An interposer according to claim 1, further comprising a passivation layer of an inorganic material formed, covering the thin film capacitor. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 10. An interposer according to claim 9, wherein the passivation layer is formed of aluminum oxide, silicon dioxide or silicon nitride. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 11. An interposer according to claim 9, wherein the passivation layer is an amorphous film formed of the same material as the dielectric thin film. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 12. An interposer according to claim 1, wherein the capacitor electrode is formed of Au, Cr, Cu, W, Pt, Pd, Ru, Ru oxide, Ir, Ir oxide or Pt oxide. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 13. A method for manufacturing an interposer comprising the steps of: forming over one primary surface of a semiconductor substrate a thin film capacitor including a first capacitor electrode, a crystalline dielectric thin film formed over the first capacitor electrode and a second capacitor electrode formed over the dielectric thin film; forming the first semi-cured resin layer over said one primary surface of the semiconductor substrate and over the thin film capacitor, and a first partial electrode to be a first through-electrode, which is buried in the first resin layer and electrically connected to the first capacitor electrode or the second capacitor electrode; cutting an upper part of the first partial electrode and an upper part of the first resin layer with a cutting tool; forming a second semi-cured resin layer over one primary surface of a glass substrate with a second through-electrode buried in, and a second partial electrode to be a part of the first through-electrode, which is buried in the second resin layer and connected to the second through-electrode; cutting an upper part of the second partial electrode and an upper part of the second resin layer with the cutting tool; making thermal processing with the first resin layer and the second resin layer adhered to each other to adhere the first resin layer and the second resin layer to each other while connecting the first partial electrode and the second partial electrode to each other; removing the semiconductor substrate; forming a third resin layer over said one primary surface of the glass substrate, covering the thin film capacitor; burying a third partial electrode to be the first through-electrode in the third resin layer. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 14. A method for manufacturing an interposer according to claim 13, wherein in the step of forming the first resin layer, the first resin layer of a thermosetting resin is cured without producing a by-product, and in the step of forming the second resin layer, the second resin layer of a thermosetting resin is cured without producing a by-product. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 15. A method for manufacturing an interposer according to claim 13, wherein the glass substrate is formed of borosilicate glass. ) Array ( [Name] => Comment [Label] => Claim [Group] => Patent [Data] => 16. A method for manufacturing an interposer according to claim 13, wherein the first resin layer and the second resin layer are formed of benzocyclobutene resin, polyimide resin, epoxy resin, bismaleimide resin, maleimide resin, cyanate resin, polyphenylene ether resin, polyphenylene oxide resin, fluorine-containing resin, liquid crystal polymer, polyether imide resin or polyether etherketone resin. ) Array ( [Name] => CodeClass [Label] => Current U.S. Class [Group] => Patent [Data] => 174258/000 ) Array ( [Name] => CodeClass [Label] => Current International Class [Group] => Patent [Data] => 05; 05 ) Array ( [Name] => AN [Label] => Accession Number [Group] => ID [Data] => edspap.20080073110 ) |
| RecordInfo |
Array
(
[BibEntity] => Array
(
[Languages] => Array
(
[0] => Array
(
[Text] => English
)
)
[Titles] => Array
(
[0] => Array
(
[TitleFull] => Interposer and method for manufacturing the same
[Type] => main
)
)
)
[BibRelationships] => Array
(
[HasContributorRelationships] => Array
(
[0] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Shioga, Takeshi
)
)
)
[1] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Kurihara, Kazuaki
)
)
)
[2] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Nakagawa, Kanae
)
)
)
[3] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Sakai, Taiji
)
)
)
[4] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Mizukoshi, Masataka
)
)
)
)
[IsPartOfRelationships] => Array
(
[0] => Array
(
[BibEntity] => Array
(
[Dates] => Array
(
[0] => Array
(
[D] => 27
[M] => 03
[Text] => March 27, 2008
[Type] => published
[Y] => 2008
)
)
)
)
)
)
)
|
| IllustrationInfo |