Academic Journal
Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
| العنوان: | Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001) |
|---|---|
| المؤلفون: | P. G. Gucciardi, J.-C. Valmalette, M. Lopes, R. Deturche, M. Lamy de la Chapelle, D. Barchiesi, F. Bonaccorso, C. D'Andrea, M. Chaigneau, G. Picardi, R. Ossikovski |
| المصدر: | Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali, Vol 89, Iss S1, Pp C1V89S1P042-1 (2011) |
| بيانات النشر: | Accademia Peloritana dei Pericolanti, 2011. |
| سنة النشر: | 2011 |
| المجموعة: | LCC:Science (General) |
| مصطلحات موضوعية: | Science (General), Q1-390 |
| الوصف: | We report on the effects of light depolarization induced by sharp metallic tips in Tip-Enhanced Raman Spectroscopy (TERS). Experiments on Si(001) and GaAs(001) crystals show that the excitation field depolarization induces a selective enhancement of specific Raman modes, depending on their Raman tensor symmetry. A complete polarization analysis of the light backscattered from the tip confirms the TERS findings. The spatial confinement of the depolarization field is studied and its dependence on the excitation wavelength and power are explored. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English Italian |
| تدمد: | 0365-0359 1825-1242 |
| Relation: | https://doaj.org/toc/0365-0359; https://doaj.org/toc/1825-1242 |
| DOI: | 10.1478/C1V89S1P042 |
| URL الوصول: | https://doaj.org/article/62d54f7fb48c426f89439cbfea8932a8 |
| رقم الانضمام: | edsdoj.62d54f7fb48c426f89439cbfea8932a8 |
| قاعدة البيانات: | Directory of Open Access Journals |
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