Academic Journal
Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor
| العنوان: | Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor |
|---|---|
| المؤلفون: | Park, BG Park, Byong Guk, Banerjee, T, Min, BC, Lodder, JC, Jansen, R |
| بيانات النشر: | AMERICAN PHYSICAL SOC |
| سنة النشر: | 2006 |
| المجموعة: | Korea Advanced Institute of Science and Technology: KOASAS - KAIST Open Access Self-Archiving System |
| الوصف: | The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection. ; 신소재공학과 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| الاتاحة: | http://hdl.handle.net/10203/87949 |
| رقم الانضمام: | edsbas.F990D400 |
| قاعدة البيانات: | BASE |
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