Academic Journal

Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

التفاصيل البيبلوغرافية
العنوان: Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor
المؤلفون: Park, BG Park, Byong Guk, Banerjee, T, Min, BC, Lodder, JC, Jansen, R
بيانات النشر: AMERICAN PHYSICAL SOC
سنة النشر: 2006
المجموعة: Korea Advanced Institute of Science and Technology: KOASAS - KAIST Open Access Self-Archiving System
الوصف: The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection. ; 신소재공학과
نوع الوثيقة: article in journal/newspaper
اللغة: English
الاتاحة: http://hdl.handle.net/10203/87949
رقم الانضمام: edsbas.F990D400
قاعدة البيانات: BASE