Conference
32nm gate-first high-k/metal-gate technology for high performance low power applications
| العنوان: | 32nm gate-first high-k/metal-gate technology for high performance low power applications |
|---|---|
| المؤلفون: | Diaz, C. H., Goto, K., Huang, H.T., Yasuda, Yuri, Tsao, C.P., Chu, T.T., Lu, W.T., Chang, Vincent, Hou, Y.T., Chao, Y.S., Hsu, P.F., Chen, C.L., Lin, K.C., Ng, J.A., Yang, W.C., Chen, C.H., Peng, Y.H., Chen, C.J., Chen, C.C., Yu, M..H., Yeh, L.Y., You, K.S., Chen, K.S., Thei, K.B., Lee, C.H., Yang, S.H., Cheng, J.Y., Huang, K.T., Liaw, J.J., Ku, Y., Jang, S.M., Chuang, H., Liang, M.S. |
| المصدر: | 2008 IEEE International Electron Devices Meeting |
| بيانات النشر: | IEEE |
| سنة النشر: | 2008 |
| نوع الوثيقة: | conference object |
| اللغة: | unknown |
| DOI: | 10.1109/iedm.2008.4796770 |
| الاتاحة: | http://dx.doi.org/10.1109/iedm.2008.4796770 http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796770.pdf?arnumber=4796770 |
| رقم الانضمام: | edsbas.F0F61F53 |
| قاعدة البيانات: | BASE |
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