Academic Journal
Trigate nanowire MOSFETs analog figures of merit
| العنوان: | Trigate nanowire MOSFETs analog figures of merit |
|---|---|
| المؤلفون: | Kilchytska, Valeriya, Makovejev, Sergej, Barraud, S., Poiroux, T., Raskin, Jean-Pierre, Flandre, Denis |
| المساهمون: | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| المصدر: | Solid-State Electronics, Vol. 112, p. 78-84 (24/02/2015) |
| بيانات النشر: | Pergamon |
| سنة النشر: | 2015 |
| المجموعة: | DIAL@UCL (Université catholique de Louvain) |
| مصطلحات موضوعية: | Trigate nanowire MOSFETs, Analog figures of merit, Transconductance, Output conductance, Intrinsic gain, High-temperature |
| الوصف: | This work studies, for the first time to our best knowledge, the perspectives of trigate nanowire (TGNW) MOSFETs for analog applications. An effect of nanowire width, length and orientation as well as frequency (up to 4 GHz) and temperature (up to 225°C) on analog figures-of-merit (FoM) is analyzed. Benchmarking with other advanced devices such as ultra-thin body and BOX (UTBB) MOSFETs and SOI-based FinFETs is presented. TGNW MOSFETs are shown to be very promising for analog applications featuring high transconductance combined with high intrinsic gain. Only a slight reduction of device performance over the frequency and temperature ranges is observed. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0038-1101 1879-2405 |
| Relation: | boreal:157073; http://hdl.handle.net/2078.1/157073; urn:ISSN:0038-1101; urn:EISSN:1879-2405 |
| DOI: | 10.1016/j.sse.2015.02.003 |
| الاتاحة: | http://hdl.handle.net/2078.1/157073 https://doi.org/10.1016/j.sse.2015.02.003 |
| Rights: | info:eu-repo/semantics/restrictedAccess |
| رقم الانضمام: | edsbas.CE9BE619 |
| قاعدة البيانات: | BASE |
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