Academic Journal
Carrier dynamics in p-type InGaAs/GaAs quantum dots
| العنوان: | Carrier dynamics in p-type InGaAs/GaAs quantum dots |
|---|---|
| المؤلفون: | Wen, X, Dao, Lap Van, Davis, Jeff A, Hannaford, Peter, Mokkapati, Sudha, Jagadish, Chennupati, Tan, Hark Hoe |
| المصدر: | Journal of Materials Science: Materials in Electronics |
| بيانات النشر: | Springer |
| المجموعة: | Australian National University: ANU Digital Collections |
| مصطلحات موضوعية: | Keywords: Carrier relaxation dynamics, Photo-excited electrons, Phonons, Photoexcitation, Photoluminescence, Relaxation time, Semiconducting indium gallium arsenide, Semiconductor quantum dots |
| الوصف: | In this study we investigate the carrier relaxation dynamics in p-type doped InGaAs/GaAs quantum dots using time-integrated and time-resolved photoluminescence. The experiment shows that while a strong phonon bottleneck is observed in the undoped samples, with a 680 ps rise time of the photoluminescence intensity, the intra-dot relaxation time (31 ps) of the p-type doped samples is reduced significantly due to scattering of photo-excited electrons with the doping-induced holes. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| تدمد: | 0957-4522 |
| Relation: | http://hdl.handle.net/1885/23030; https://openresearch-repository.anu.edu.au/bitstream/1885/23030/5/WENcarrier.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/23030/7/01_Wen_Carrier_dynamics_in_p-type_2007.pdf.jpg |
| DOI: | 10.1007/s10854-007-9241-5 |
| الاتاحة: | http://hdl.handle.net/1885/23030 https://doi.org/10.1007/s10854-007-9241-5 https://openresearch-repository.anu.edu.au/bitstream/1885/23030/5/WENcarrier.pdf.jpg https://openresearch-repository.anu.edu.au/bitstream/1885/23030/7/01_Wen_Carrier_dynamics_in_p-type_2007.pdf.jpg |
| رقم الانضمام: | edsbas.C1D13F6 |
| قاعدة البيانات: | BASE |
كن أول من يترك تعليقا!