3D two-temperature magnetohydrodynamic modeling of fast thermal quenches due to injected impurities in tokamaks

التفاصيل البيبلوغرافية
العنوان: 3D two-temperature magnetohydrodynamic modeling of fast thermal quenches due to injected impurities in tokamaks
المؤلفون: Ferraro, N., Lyons, Brendan C., Kim, Charlson C., Liu, Yue -Qiang, Jardin, Stephen C.
سنة النشر: 2021
المجموعة: SciTec Connect (Office of Scientific and Technical Information - OSTI, U.S. Department of Energy)
مصطلحات موضوعية: 70 PLASMA PHYSICS AND FUSION TECHNOLOGY
الوصف: Here, an integrated model for the ionization, radiation, and advection of impurities in the extended-magnetohydrodynamic code M3D-C1 is described. This implementation makes use of the KPRAD model, which calculates bremsstrahlung radiation and impurity ionization, recombination, and radiation rates using a model in which the density of each charge state is advanced separately. The integrated model presented here allows the independent evolution of electron and ion temperatures, which is necessary to accurately model cases where the electron temperature drops more quickly than the electron-ion thermal equilibration time. This model is used to simulate the disruption of a model NSTX discharge caused by the introduction of argon impurities, using physically realistic resistivity. Despite well-mixed impurities, contraction of the current channel is found to lead to magnetohydrodynamic instabilities that result in stochastization of the magnetic field, a fast thermal quench, and localized parallel electric fields that can exceed the axisymmetric values by a factor of five for brief periods.
نوع الوثيقة: other/unknown material
وصف الملف: application/pdf
اللغة: unknown
Relation: http://www.osti.gov/servlets/purl/1480324; https://www.osti.gov/biblio/1480324; https://doi.org/10.1088/1741-4326/aae990
DOI: 10.1088/1741-4326/aae990
الاتاحة: http://www.osti.gov/servlets/purl/1480324
https://www.osti.gov/biblio/1480324
https://doi.org/10.1088/1741-4326/aae990
رقم الانضمام: edsbas.9631CCD4
قاعدة البيانات: BASE