Academic Journal
O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
| العنوان: | O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate |
|---|---|
| المؤلفون: | Oumaima Abouzaid, Hussein Mehdi, Mickael Martin, Jérémy Moeyaert, Bassem Salem, Sylvain David, Abdelkader Souifi, Nicolas Chauvin, Jean-Michel Hartmann, Bouraoui Ilahi, Denis Morris, Ali Ahaitouf, Abdelaziz Ahaitouf, Thierry Baron |
| المصدر: | Nanomaterials; Volume 10; Issue 12; Pages: 2450 |
| بيانات النشر: | Multidisciplinary Digital Publishing Institute |
| سنة النشر: | 2020 |
| المجموعة: | MDPI Open Access Publishing |
| مصطلحات موضوعية: | Quantum Dots (QDs), semiconductor III-V, Metal Organic Chemical Vapor Deposition (MOCVD) |
| الوصف: | The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates. |
| نوع الوثيقة: | text |
| وصف الملف: | application/pdf |
| اللغة: | English |
| Relation: | Synthesis, Interfaces and Nanostructures; https://dx.doi.org/10.3390/nano10122450 |
| DOI: | 10.3390/nano10122450 |
| الاتاحة: | https://doi.org/10.3390/nano10122450 |
| Rights: | https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: | edsbas.82452949 |
| قاعدة البيانات: | BASE |
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