Academic Journal
Spontaneous High-Dynamic-Range Random Current Spiking in BaF 2 Memristors
العنوان: | Spontaneous High-Dynamic-Range Random Current Spiking in BaF 2 Memristors |
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المؤلفون: | Lin, Chen-Hsun, Chuang, Yung-Tang, Chen, Cheng-Yueh, Chen, Hung-Ming, Yu, Wen-Yi, Shyue, Jing-Jong, Lin, Hao-Wu |
المساهمون: | National Science and Technology Council |
المصدر: | ACS Applied Electronic Materials ; ISSN 2637-6113 2637-6113 |
بيانات النشر: | American Chemical Society (ACS) |
سنة النشر: | 2025 |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
DOI: | 10.1021/acsaelm.4c01945 |
الاتاحة: | https://doi.org/10.1021/acsaelm.4c01945 https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c01945 |
Rights: | https://creativecommons.org/licenses/by/4.0/ |
رقم الانضمام: | edsbas.77A224AE |
قاعدة البيانات: | BASE |
DOI: | 10.1021/acsaelm.4c01945 |
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