Academic Journal
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
| العنوان: | Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions |
|---|---|
| المؤلفون: | Andreou, Charalambos M., González-Castaño, Diego Miguel, Gerardin, Simone, Bagatin, Marta, Rodriguez, Faustino Gómez, Paccagnella, Alessandro, Prokofiev, Alexander V., Javanainen, Arto, Virtanen, Ari, Liberali, Valentino, Calligaro, Cristiano, Nahmad, Daniel, Georgiou, Julius |
| بيانات النشر: | MDPI AG |
| سنة النشر: | 2019 |
| المجموعة: | JYX - Jyväskylä University Digital Archive / Jyväskylän yliopiston julkaisuarkisto |
| مصطلحات موضوعية: | analog single-event transient (ASET), bandgap voltage reference (BGR), CMOS analog integrated circuits, gamma-rays, heavy-ions, ionization, radiation hardening by design (RHBD), reference circuits, single-event effects (SEE), space electronics, total ionization dose (TID), voltage reference, X-rays, säteilyfysiikka, mikroelektroniikka, mikropiirit, ionisoiva säteily, gammasäteily, röntgensäteily, hiukkassäteily, protonit |
| الوصف: | The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements. ; peerReviewed |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf; fulltext |
| اللغة: | English |
| تدمد: | 2079-9292 |
| Relation: | Electronics; CONVID_30873031 |
| الاتاحة: | http://urn.fi/URN:NBN:fi:jyu-201905292880 |
| Rights: | CC BY 4.0 ; © authors, 2019. ; openAccess ; https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: | edsbas.6597E271 |
| قاعدة البيانات: | BASE |
Full Text Finder | ResultId |
1 |
|---|---|
| Header |
edsbas BASE edsbas.6597E271 893 3 Academic Journal academicJournal 892.664306640625 |
| PLink |
https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsbas&AN=edsbas.6597E271&custid=s6537998&authtype=sso |
| FullText |
Array
(
[Availability] => 0
)
Array ( [0] => Array ( [Url] => http://urn.fi/URN:NBN:fi:jyu-201905292880# [Name] => EDS - BASE [Category] => fullText [Text] => View record in BASE [MouseOverText] => View record in BASE ) [1] => Array ( [Url] => https://resolver.ebscohost.com/openurl?custid=s6537998&groupid=main&authtype=ip,guest&sid=EBSCO:edsbas&genre=article&issn=20799292&ISBN=&volume=&issue=&date=20190101&spage=&pages=&title=Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions&atitle=Low-Power%2C%20Subthreshold%20Reference%20Circuits%20for%20the%20Space%20Environment%20%3A%20Evaluated%20with%20%CE%B3-rays%2C%20X-rays%2C%20Protons%20and%20Heavy%20Ions&id=DOI: [Name] => Full Text Finder (s6537998api) [Category] => fullText [Text] => Full Text Finder [Icon] => https://imageserver.ebscohost.com/branding/images/FTF.gif [MouseOverText] => Full Text Finder ) ) |
| Items |
Array
(
[Name] => Title
[Label] => Title
[Group] => Ti
[Data] => Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
)
Array ( [Name] => Author [Label] => Authors [Group] => Au [Data] => <searchLink fieldCode="AR" term="%22Andreou%2C+Charalambos+M%2E%22">Andreou, Charalambos M.</searchLink><br /><searchLink fieldCode="AR" term="%22González-Castaño%2C+Diego+Miguel%22">González-Castaño, Diego Miguel</searchLink><br /><searchLink fieldCode="AR" term="%22Gerardin%2C+Simone%22">Gerardin, Simone</searchLink><br /><searchLink fieldCode="AR" term="%22Bagatin%2C+Marta%22">Bagatin, Marta</searchLink><br /><searchLink fieldCode="AR" term="%22Rodriguez%2C+Faustino+Gómez%22">Rodriguez, Faustino Gómez</searchLink><br /><searchLink fieldCode="AR" term="%22Paccagnella%2C+Alessandro%22">Paccagnella, Alessandro</searchLink><br /><searchLink fieldCode="AR" term="%22Prokofiev%2C+Alexander+V%2E%22">Prokofiev, Alexander V.</searchLink><br /><searchLink fieldCode="AR" term="%22Javanainen%2C+Arto%22">Javanainen, Arto</searchLink><br /><searchLink fieldCode="AR" term="%22Virtanen%2C+Ari%22">Virtanen, Ari</searchLink><br /><searchLink fieldCode="AR" term="%22Liberali%2C+Valentino%22">Liberali, Valentino</searchLink><br /><searchLink fieldCode="AR" term="%22Calligaro%2C+Cristiano%22">Calligaro, Cristiano</searchLink><br /><searchLink fieldCode="AR" term="%22Nahmad%2C+Daniel%22">Nahmad, Daniel</searchLink><br /><searchLink fieldCode="AR" term="%22Georgiou%2C+Julius%22">Georgiou, Julius</searchLink> ) Array ( [Name] => Publisher [Label] => Publisher Information [Group] => PubInfo [Data] => MDPI AG ) Array ( [Name] => DatePubCY [Label] => Publication Year [Group] => Date [Data] => 2019 ) Array ( [Name] => Subset [Label] => Collection [Group] => HoldingsInfo [Data] => JYX - Jyväskylä University Digital Archive / Jyväskylän yliopiston julkaisuarkisto ) Array ( [Name] => Subject [Label] => Subject Terms [Group] => Su [Data] => <searchLink fieldCode="DE" term="%22analog+single-event+transient+%28ASET%29%22">analog single-event transient (ASET)</searchLink><br /><searchLink fieldCode="DE" term="%22bandgap+voltage+reference+%28BGR%29%22">bandgap voltage reference (BGR)</searchLink><br /><searchLink fieldCode="DE" term="%22CMOS+analog+integrated+circuits%22">CMOS analog integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22gamma-rays%22">gamma-rays</searchLink><br /><searchLink fieldCode="DE" term="%22heavy-ions%22">heavy-ions</searchLink><br /><searchLink fieldCode="DE" term="%22ionization%22">ionization</searchLink><br /><searchLink fieldCode="DE" term="%22radiation+hardening+by+design+%28RHBD%29%22">radiation hardening by design (RHBD)</searchLink><br /><searchLink fieldCode="DE" term="%22reference+circuits%22">reference circuits</searchLink><br /><searchLink fieldCode="DE" term="%22single-event+effects+%28SEE%29%22">single-event effects (SEE)</searchLink><br /><searchLink fieldCode="DE" term="%22space+electronics%22">space electronics</searchLink><br /><searchLink fieldCode="DE" term="%22total+ionization+dose+%28TID%29%22">total ionization dose (TID)</searchLink><br /><searchLink fieldCode="DE" term="%22voltage+reference%22">voltage reference</searchLink><br /><searchLink fieldCode="DE" term="%22X-rays%22">X-rays</searchLink><br /><searchLink fieldCode="DE" term="%22säteilyfysiikka%22">säteilyfysiikka</searchLink><br /><searchLink fieldCode="DE" term="%22mikroelektroniikka%22">mikroelektroniikka</searchLink><br /><searchLink fieldCode="DE" term="%22mikropiirit%22">mikropiirit</searchLink><br /><searchLink fieldCode="DE" term="%22ionisoiva+säteily%22">ionisoiva säteily</searchLink><br /><searchLink fieldCode="DE" term="%22gammasäteily%22">gammasäteily</searchLink><br /><searchLink fieldCode="DE" term="%22röntgensäteily%22">röntgensäteily</searchLink><br /><searchLink fieldCode="DE" term="%22hiukkassäteily%22">hiukkassäteily</searchLink><br /><searchLink fieldCode="DE" term="%22protonit%22">protonit</searchLink> ) Array ( [Name] => Abstract [Label] => Description [Group] => Ab [Data] => The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements. ; peerReviewed ) Array ( [Name] => TypeDocument [Label] => Document Type [Group] => TypDoc [Data] => article in journal/newspaper ) Array ( [Name] => Format [Label] => File Description [Group] => SrcInfo [Data] => application/pdf; fulltext ) Array ( [Name] => Language [Label] => Language [Group] => Lang [Data] => English ) Array ( [Name] => ISSN [Label] => ISSN [Group] => ISSN [Data] => 2079-9292 ) Array ( [Name] => NoteTitleSource [Label] => Relation [Group] => SrcInfo [Data] => Electronics; CONVID_30873031 ) Array ( [Name] => URL [Label] => Availability [Group] => URL [Data] => http://urn.fi/URN:NBN:fi:jyu-201905292880 ) Array ( [Name] => Copyright [Label] => Rights [Group] => Cpyrght [Data] => CC BY 4.0 ; © authors, 2019. ; openAccess ; https://creativecommons.org/licenses/by/4.0/ ) Array ( [Name] => AN [Label] => Accession Number [Group] => ID [Data] => edsbas.6597E271 ) |
| RecordInfo |
Array
(
[BibEntity] => Array
(
[Languages] => Array
(
[0] => Array
(
[Text] => English
)
)
[Subjects] => Array
(
[0] => Array
(
[SubjectFull] => analog single-event transient (ASET)
[Type] => general
)
[1] => Array
(
[SubjectFull] => bandgap voltage reference (BGR)
[Type] => general
)
[2] => Array
(
[SubjectFull] => CMOS analog integrated circuits
[Type] => general
)
[3] => Array
(
[SubjectFull] => gamma-rays
[Type] => general
)
[4] => Array
(
[SubjectFull] => heavy-ions
[Type] => general
)
[5] => Array
(
[SubjectFull] => ionization
[Type] => general
)
[6] => Array
(
[SubjectFull] => radiation hardening by design (RHBD)
[Type] => general
)
[7] => Array
(
[SubjectFull] => reference circuits
[Type] => general
)
[8] => Array
(
[SubjectFull] => single-event effects (SEE)
[Type] => general
)
[9] => Array
(
[SubjectFull] => space electronics
[Type] => general
)
[10] => Array
(
[SubjectFull] => total ionization dose (TID)
[Type] => general
)
[11] => Array
(
[SubjectFull] => voltage reference
[Type] => general
)
[12] => Array
(
[SubjectFull] => X-rays
[Type] => general
)
[13] => Array
(
[SubjectFull] => säteilyfysiikka
[Type] => general
)
[14] => Array
(
[SubjectFull] => mikroelektroniikka
[Type] => general
)
[15] => Array
(
[SubjectFull] => mikropiirit
[Type] => general
)
[16] => Array
(
[SubjectFull] => ionisoiva säteily
[Type] => general
)
[17] => Array
(
[SubjectFull] => gammasäteily
[Type] => general
)
[18] => Array
(
[SubjectFull] => röntgensäteily
[Type] => general
)
[19] => Array
(
[SubjectFull] => hiukkassäteily
[Type] => general
)
[20] => Array
(
[SubjectFull] => protonit
[Type] => general
)
)
[Titles] => Array
(
[0] => Array
(
[TitleFull] => Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with γ-rays, X-rays, Protons and Heavy Ions
[Type] => main
)
)
)
[BibRelationships] => Array
(
[HasContributorRelationships] => Array
(
[0] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Andreou, Charalambos M.
)
)
)
[1] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => González-Castaño, Diego Miguel
)
)
)
[2] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Gerardin, Simone
)
)
)
[3] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Bagatin, Marta
)
)
)
[4] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Rodriguez, Faustino Gómez
)
)
)
[5] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Paccagnella, Alessandro
)
)
)
[6] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Prokofiev, Alexander V.
)
)
)
[7] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Javanainen, Arto
)
)
)
[8] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Virtanen, Ari
)
)
)
[9] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Liberali, Valentino
)
)
)
[10] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Calligaro, Cristiano
)
)
)
[11] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Nahmad, Daniel
)
)
)
[12] => Array
(
[PersonEntity] => Array
(
[Name] => Array
(
[NameFull] => Georgiou, Julius
)
)
)
)
[IsPartOfRelationships] => Array
(
[0] => Array
(
[BibEntity] => Array
(
[Dates] => Array
(
[0] => Array
(
[D] => 01
[M] => 01
[Type] => published
[Y] => 2019
)
)
[Identifiers] => Array
(
[0] => Array
(
[Type] => issn-print
[Value] => 20799292
)
[1] => Array
(
[Type] => issn-locals
[Value] => edsbas
)
[2] => Array
(
[Type] => issn-locals
[Value] => edsbas.oa
)
)
)
)
)
)
)
|
| IllustrationInfo |