Academic Journal
As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors
| العنوان: | As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors |
|---|---|
| المؤلفون: | Yablonovitch, E., Gmitter, T. J., Bagley, B. G. |
| المصدر: | Applied Physics Letters ; volume 57, issue 21, page 2241-2243 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 1990 |
| الوصف: | Much of the technology of our era is based on the SiO2/Si amorphous/crystalline heterojunction interface. Now it appears that As2S3/GaAs amorphous/crystalline heterojunctions show some technological promise. We have found that properly prepared As2S3/GaAs interfaces can have reasonably good electronic quality. The interfacial recombination velocity is ≊15 000 cm/s at flat band, which results in a ∼100-fold reduction of perimeter recombination currents in p-n junction mesas. This can be important on heterojunction transistor emitter-base perimeters, solar cell and light-emitting diode perimeters, and for reducing mirror facet recombination in semiconductor lasers. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/1.104163 |
| الاتاحة: | http://dx.doi.org/10.1063/1.104163 https://pubs.aip.org/aip/apl/article-pdf/57/21/2241/18479357/2241_1_online.pdf |
| رقم الانضمام: | edsbas.49081CCF |
| قاعدة البيانات: | BASE |
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