Academic Journal
Germanium gate hydrogen-terminated diamond field effect transistor with Al 2 O 3 dielectric layer
| العنوان: | Germanium gate hydrogen-terminated diamond field effect transistor with Al 2 O 3 dielectric layer |
|---|---|
| المؤلفون: | Minghui, Zhang, Wei, Wang, Feng, Wen, Fang, Lin, Genqiang, Chen, Fei, Wang, Shi, He, Yanfeng, Wang, Shuwei, Fan, Renan, Bu, Tai, Min, Cui, Yu, Hongxing, Wang |
| المساهمون: | China Postdoctoral Science Foundation, National Key R&D Program of China, National Natural Science Foundation of China, Key R&D Program of Shaanxi Province, National Natural Science Foundation of Hebei Province |
| المصدر: | Functional Diamond ; volume 2, issue 1, page 258-262 ; ISSN 2694-1112 2694-1120 |
| بيانات النشر: | Informa UK Limited |
| سنة النشر: | 2022 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1080/26941112.2022.2159775 |
| الاتاحة: | http://dx.doi.org/10.1080/26941112.2022.2159775 https://www.tandfonline.com/doi/pdf/10.1080/26941112.2022.2159775 |
| Rights: | http://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: | edsbas.4519631B |
| قاعدة البيانات: | BASE |
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