Academic Journal
Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
| العنوان: | Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure |
|---|---|
| المؤلفون: | An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo |
| المصدر: | Micromachines, Vol 15, Iss 4, p 517 (2024) |
| بيانات النشر: | MDPI AG |
| سنة النشر: | 2024 |
| المجموعة: | Directory of Open Access Journals: DOAJ Articles |
| مصطلحات موضوعية: | p-GaN gate, HEMT, epitaxy, threshold voltage, gate leakage current, Mechanical engineering and machinery, TJ1-1570 |
| الوصف: | This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum drain current, reduce gate leakage, and achieve lower on-resistance (R on ) performance. A comparison was made between the conventional device without the composited barrier and the device with the composited barrier structure. The maximum drain current is significantly increased by 37%, and R on is significantly reduced by 23%, highlighting the synergistic impact of the composite barrier structure on device performance improvement. This reason can be attributed to the undoped GaN (u-GaN) barrier layer beneath p-GaN, which was introduced to mitigate Mg diffusion in the capping layer, thus addressing its negative effects. Furthermore, the AlN barrier layer exhibits enhanced electrical properties, which can be attributed to the critical role of high-energy-gap properties that increase the 2DEG carrier density and block leakage pathways. These traps impact the device behavior mechanism, and the simulation for a more in-depth analysis of how the composited barrier structure brings improvement is introduced using Synopsys Sentaurus TCAD. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 2072-666X |
| Relation: | https://www.mdpi.com/2072-666X/15/4/517; https://doaj.org/toc/2072-666X; https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a |
| DOI: | 10.3390/mi15040517 |
| الاتاحة: | https://doi.org/10.3390/mi15040517 https://doaj.org/article/41359acb07fa461a8455ab71c1169c8a |
| رقم الانضمام: | edsbas.2673ACC |
| قاعدة البيانات: | BASE |
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