Academic Journal
N‐Doped ZnSnO Optoelectronic Synaptic Thin Film Transistors with Enhanced Visible‐Light Response
| العنوان: | N‐Doped ZnSnO Optoelectronic Synaptic Thin Film Transistors with Enhanced Visible‐Light Response |
|---|---|
| المؤلفون: | Liu, Xiaohan, Ren, Junyan, Hu, Peixuan, Qian, Yujia, Li, Ting, Liang, Lingyan, Cao, Hongtao |
| المساهمون: | Natural Science Foundation of Zhejiang Province, Ningbo Natural Science Foundation, National Natural Science Foundation of China |
| المصدر: | physica status solidi (RRL) – Rapid Research Letters ; volume 18, issue 5 ; ISSN 1862-6254 1862-6270 |
| بيانات النشر: | Wiley |
| سنة النشر: | 2024 |
| المجموعة: | Wiley Online Library (Open Access Articles via Crossref) |
| الوصف: | In this work, nitrogen‐doped zinc‐tin‐oxygen (ZnSnO:N) optoelectronic synaptic thin film transistors (TFTs) with superior visible light response are fabricated. Nitrogen doping narrows the bandgap of ZnSnO, which in turn broadens the absorption spectrum. Additionally, the reduction of non‐radiative centers in the channel layer prolongs the lifetime of the photogenerated electrons, resulting in enhancements to the photo response throughout the visible region. Optoelectronic synaptic devices based on ZnSnO:N TFTs can accurately replicate synaptic behaviors, including short‐term plasticity (STP) and long‐term plasticity (LTP). Furthermore, the ZnSnO:N optoelectronic synaptic TFT‐based array has the potential to improve image contrast. The ZnSnO:N TFT exhibits a considerable improvement in both visible light photosensitivity and synaptic plasticity. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1002/pssr.202300490 |
| الاتاحة: | http://dx.doi.org/10.1002/pssr.202300490 https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202300490 |
| Rights: | http://onlinelibrary.wiley.com/termsAndConditions#vor |
| رقم الانضمام: | edsbas.10524870 |
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