Report
Giant domain wall anomalous Hall effect in an antiferromagnet
| العنوان: | Giant domain wall anomalous Hall effect in an antiferromagnet |
|---|---|
| المؤلفون: | Xia, Wei, Bai, Bo, Chen, Xuejiao, Yang, Yichen, Zhang, Yang, Yuan, Jian, Li, Qiang, Yang, Kunya, Liu, Xiangqi, Shi, Yang, Ma, Haiyang, Yang, Huali, He, Mingquan, Li, Lei, Xi, Chuanying, Pi, Li, Lv, Xiaodong, Wang, Xia, Liu, Xuerong, Li, Shiyan, Zhou, Xiaodong, Liu, Jianpeng, Chen, Yulin, Shen, Jian, Shen, Dawei, Zhong, Zhicheng, Wang, Wenbo, Guo, Yanfeng |
| المصدر: | Physical Review Letters, 2024 |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons |
| الوصف: | Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncolinear spin structure and nonvanishing Berry curvature. Here, we report another origin of AHE in a layered antiferromagnet EuAl2Si2, namely the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to a giant AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T reaching a record value of ~ 1,5100 S cm-1 among bulk systems and being two orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation not only sets a new paradigm for exploration of large anomalous Hall effect, but also provides potential applications in spintronic devices. Comment: 20 pages Main Text+ SI 33 pages, 5 main figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2312.07336 |
| رقم الانضمام: | edsarx.2312.07336 |
| قاعدة البيانات: | arXiv |
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