Report
Electronic confinement in quantum dots of twisted bilayer graphene
| العنوان: | Electronic confinement in quantum dots of twisted bilayer graphene |
|---|---|
| المؤلفون: | Zhou, Xiao-Feng, Liu, Yi-Wen, Yan, Hong-Yi, Fu, Zhong-Qiu, Liu, Haiwen, He, Lin |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | Electronic properties of quantum dots (QDs) depend sensitively on their parent materials. Therefore, confined electronic states in graphene QDs (GQDs) of monolayer and Bernal-stacked bilayer graphene are quite different. Twisted bilayer graphene (TBG) is distinct from monolayer and Bernal-stacked bilayer graphene because of the new degree of freedom: twist angle. In the past few years, numerous efforts have been made to realize the GQDs of monolayer and Bernal-stacked bilayer graphene and achieved great success. Thus far, however, strategies for realizing GQDs of TBG have been elusive. Here, we demonstrate a general approach for fabricating stationary GQDs of TBG by introducing nanoscale p-n junctions with sharp boundaries in the TBG. We verify the confinement of low-energy massless Dirac fermions via whispering-gallery modes in the GQDs of TBG. Unexpectedly, electronic states around van Hove singularities of the TBG are also strongly modified around the GQDs. Such a feature has never been reported and is attributed to spatial variation of the interlayer coupling in the TBG induced by the GQDs. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.104.235417 |
| URL الوصول: | http://arxiv.org/abs/2110.10823 |
| رقم الانضمام: | edsarx.2110.10823 |
| قاعدة البيانات: | arXiv |
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