Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys

التفاصيل البيبلوغرافية
العنوان: Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys
المؤلفون: Yang, Kai-Yu, Yamashita, Y., Läuchli, A. M., Sigrist, M., Rice, T. M.
المصدر: EPL 95 (2011) 47007
سنة النشر: 2011
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Strongly Correlated Electrons
الوصف: The simplified bandstructure introduced by Mazurenko et al to model FeSi is used to analyze the singlet semiconductor to ferromagnetic metal transition in the isoelectronic isostructural alloys, FeSi$_{1-x}$Ge$_x$. The complex bandstructure of the alloy is replaced by an alternating chain of doubly and singly degenerate atoms to represent Fe and Si/Ge respectively. The former(latter) form narrow(broad) bands with a substantial hybridization between them. A substantial onsite repulsion including a Hund's rule coupling is introduced on the Fe sites. The mean field phase diagram contains a first order phase transition from the singlet semiconductor to a ferromagnetic metal with increasing temperature and interaction strength similar to the alloys. The analysis also reproduces the rapid rise of the spin susceptibility in the semiconductor with a crossover to a Curie-Weiss form at higher temperatures. Good agreement is found at zero temperature between the mean field and accurate DMRG calculations.
Comment: 6 pages, 9 figures
نوع الوثيقة: Working Paper
DOI: 10.1209/0295-5075/95/47007
URL الوصول: http://arxiv.org/abs/1102.1190
رقم الانضمام: edsarx.1102.1190
قاعدة البيانات: arXiv
ResultId 1
Header edsarx
arXiv
edsarx.1102.1190
933
3
Report
report
932.668212890625
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1102.1190&custid=s6537998&authtype=sso
FullText Array ( [Availability] => 0 )
Array ( [0] => Array ( [Url] => http://arxiv.org/abs/1102.1190 [Name] => EDS - Arxiv [Category] => fullText [Text] => View record in Arxiv [MouseOverText] => View record in Arxiv ) )
Items Array ( [Name] => Title [Label] => Title [Group] => Ti [Data] => Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys )
Array ( [Name] => Author [Label] => Authors [Group] => Au [Data] => <searchLink fieldCode="AR" term="%22Yang%2C+Kai-Yu%22">Yang, Kai-Yu</searchLink><br /><searchLink fieldCode="AR" term="%22Yamashita%2C+Y%2E%22">Yamashita, Y.</searchLink><br /><searchLink fieldCode="AR" term="%22Läuchli%2C+A%2E+M%2E%22">Läuchli, A. M.</searchLink><br /><searchLink fieldCode="AR" term="%22Sigrist%2C+M%2E%22">Sigrist, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Rice%2C+T%2E+M%2E%22">Rice, T. M.</searchLink> )
Array ( [Name] => TitleSource [Label] => Source [Group] => Src [Data] => EPL 95 (2011) 47007 )
Array ( [Name] => DatePubCY [Label] => Publication Year [Group] => Date [Data] => 2011 )
Array ( [Name] => Subset [Label] => Collection [Group] => HoldingsInfo [Data] => Condensed Matter )
Array ( [Name] => Subject [Label] => Subject Terms [Group] => Su [Data] => <searchLink fieldCode="DE" term="%22Condensed+Matter+-+Strongly+Correlated+Electrons%22">Condensed Matter - Strongly Correlated Electrons</searchLink> )
Array ( [Name] => Abstract [Label] => Description [Group] => Ab [Data] => The simplified bandstructure introduced by Mazurenko et al to model FeSi is used to analyze the singlet semiconductor to ferromagnetic metal transition in the isoelectronic isostructural alloys, FeSi$_{1-x}$Ge$_x$. The complex bandstructure of the alloy is replaced by an alternating chain of doubly and singly degenerate atoms to represent Fe and Si/Ge respectively. The former(latter) form narrow(broad) bands with a substantial hybridization between them. A substantial onsite repulsion including a Hund's rule coupling is introduced on the Fe sites. The mean field phase diagram contains a first order phase transition from the singlet semiconductor to a ferromagnetic metal with increasing temperature and interaction strength similar to the alloys. The analysis also reproduces the rapid rise of the spin susceptibility in the semiconductor with a crossover to a Curie-Weiss form at higher temperatures. Good agreement is found at zero temperature between the mean field and accurate DMRG calculations.<br />Comment: 6 pages, 9 figures )
Array ( [Name] => TypeDocument [Label] => Document Type [Group] => TypDoc [Data] => Working Paper )
Array ( [Name] => DOI [Label] => DOI [Group] => ID [Data] => 10.1209/0295-5075/95/47007 )
Array ( [Name] => URL [Label] => Access URL [Group] => URL [Data] => <link linkTarget="URL" linkTerm="http://arxiv.org/abs/1102.1190" linkWindow="_blank">http://arxiv.org/abs/1102.1190</link> )
Array ( [Name] => AN [Label] => Accession Number [Group] => ID [Data] => edsarx.1102.1190 )
RecordInfo Array ( [BibEntity] => Array ( [Identifiers] => Array ( [0] => Array ( [Type] => doi [Value] => 10.1209/0295-5075/95/47007 ) ) [Subjects] => Array ( [0] => Array ( [SubjectFull] => Condensed Matter - Strongly Correlated Electrons [Type] => general ) ) [Titles] => Array ( [0] => Array ( [TitleFull] => Microscopic model for the semiconductor-to-ferromagnetic-metal transition in FeSi$_{1-x}$Ge$_{x}$ Alloys [Type] => main ) ) ) [BibRelationships] => Array ( [HasContributorRelationships] => Array ( [0] => Array ( [PersonEntity] => Array ( [Name] => Array ( [NameFull] => Yang, Kai-Yu ) ) ) [1] => Array ( [PersonEntity] => Array ( [Name] => Array ( [NameFull] => Yamashita, Y. ) ) ) [2] => Array ( [PersonEntity] => Array ( [Name] => Array ( [NameFull] => Läuchli, A. M. ) ) ) [3] => Array ( [PersonEntity] => Array ( [Name] => Array ( [NameFull] => Sigrist, M. ) ) ) [4] => Array ( [PersonEntity] => Array ( [Name] => Array ( [NameFull] => Rice, T. M. ) ) ) ) [IsPartOfRelationships] => Array ( [0] => Array ( [BibEntity] => Array ( [Dates] => Array ( [0] => Array ( [D] => 06 [M] => 02 [Type] => published [Y] => 2011 ) ) ) ) ) ) )
IllustrationInfo