Charge Carrier Screening in Photoexcited Epitaxial Semiconductor Nanorods Revealed by Transient X-ray Absorption Linear Dichroism

التفاصيل البيبلوغرافية
العنوان: Charge Carrier Screening in Photoexcited Epitaxial Semiconductor Nanorods Revealed by Transient X-ray Absorption Linear Dichroism
المؤلفون: John C. Burke, Rachel Wallick, Thomas Rossi, Anne Marie March, Cecilia M. Gentle, Tyler N. Haddock, Gilles Doumy, Conner P. Dykstra, Renske M. van der Veen
المصدر: Nano letters. 21(22)
سنة النشر: 2021
مصطلحات موضوعية: Materials science, Band gap, business.industry, Mechanical Engineering, Bioengineering, General Chemistry, Electronic structure, Condensed Matter Physics, Linear dichroism, Photoexcitation, Condensed Matter::Materials Science, Semiconductor, Excited state, Optoelectronics, General Materials Science, Charge carrier, business, Absorption (electromagnetic radiation)
الوصف: Understanding the electronic structure and dynamics of semiconducting nanomaterials at the atomic level is crucial for the realization and optimization of devices in solar energy, catalysis, and optoelectronic applications. We report here on the use of ultrafast X-ray linear dichroism spectroscopy to monitor the carrier dynamics in epitaxial ZnO nanorods after band gap photoexcitation. By rigorously subtracting out thermal contributions and conducting ab initio calculations, we reveal an overall depletion of absorption cross sections in the transient X-ray spectra caused by photogenerated charge carriers screening the core-hole potential of the X-ray absorbing atom. At low laser excitation densities, we observe phase-space filling by excited electrons and holes separately. These results pave the way for carrier- and element-specific probing of charge transfer dynamics across heterostructured interfaces with ultrafast table-top and fourth-generation X-ray sources.
تدمد: 1530-6992
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84413822ab315a0a33672360a3c19da4
https://pubmed.ncbi.nlm.nih.gov/34767364
Rights: OPEN
رقم الانضمام: edsair.doi.dedup.....84413822ab315a0a33672360a3c19da4
قاعدة البيانات: OpenAIRE