Raman scattering from confined phonons in GaAs/AlGaAs quantum wires
| العنوان: | Raman scattering from confined phonons in GaAs/AlGaAs quantum wires |
|---|---|
| المؤلفون: | Sergei Ivanov, B. H. Bairamov, Atilla Aydinli, F. N. Timofeev, Bilal Tanatar, P. S. Kop’ev, Kaan Guven, B. Ya. Meltser, S A Gurevich, V. B. Smirnitskii |
| المساهمون: | Tanatar, Bilal, Aydınlı, Atilla |
| المصدر: | Superlattices and Microstructures |
| بيانات النشر: | Elsevier BV, 1998. |
| سنة النشر: | 1998 |
| مصطلحات موضوعية: | Reactive ion etching, Enderlein theory, Materials science, Photoluminescence, Phonon, Semiconducting gallium arsenide, Low temperature properties, Dielectric, Confined phonons, Semiconducting aluminum compounds, symbols.namesake, General Materials Science, Electrical and Electronic Engineering, Reactive-ion etching, Semiconductor quantum wells, Condensed matter physics, Quantum wire, Quantum wires, Semiconductor device manufacture, Crystalline materials, Condensed Matter Physics, Aluminum gallium arsenide, Raman spectroscopy, Semiconductor quantum wires, symbols, Phonons, Molecular beam epitaxy, Raman scattering |
| الوصف: | We report on photoluminescence and Raman scattering performed at low temperature ( T = 10 K) on GaAs/Al 0.3 Ga 0.7 As quantum-well wires with effective wire widths of L = 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο L 10 = 285.6 cm −1 for L = 11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al 0.3 Ga 0.7 As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques. |
| وصف الملف: | application/pdf |
| تدمد: | 0749-6036 |
| DOI: | 10.1006/spmi.1996.0259 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f08476869e651cf16be6190bc4cae78 https://doi.org/10.1006/spmi.1996.0259 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....7f08476869e651cf16be6190bc4cae78 |
| قاعدة البيانات: | OpenAIRE |
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