Optimization of epitaxial graphene growth for quantum metrology
| العنوان: | Optimization of epitaxial graphene growth for quantum metrology |
|---|---|
| المؤلفون: | Momeni Pakdehi, Davood |
| بيانات النشر: | Hannover : Institutionelles Repositorium der Leibniz Universität Hannover, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | SiC, Argon-Flussrate, polymer-assisted sublimation growth, Wachstum des epitaktischen Graphens, Polarization doping, epitaxial graphene growth, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Widerstandsanisotropie, resistance anisotropy, argon flow-rate, silicon carbide, 0103 physical sciences, homogenous quasi-freestanding graphene, Stacking-order, ddc:530, Dewey Decimal Classification::500 | Naturwissenschaften::530 | Physik, Quantum resistance metrology, 010306 general physics, 0210 nano-technology, homogenes quasi-freistehendes Graphen, Siliciumcarbid |
| الوصف: | The electrical quantum standards have played a decisive role in modern metrology, particularly since the introduction of the revised International System of Units (SI) in May 2019. By adapting the basic units to exactly defined natural constants, the quantized Hall resistance (QHR) standards are also given precisely. The Von Klitzing constant RK = h/e2 (h Planck's constant and e elementary charge) can be measured precisely using the quantum Hall effect (QHE) and is thus the primary representation of the ohm. Currently, the QHR standard based on GaAs/AlGaAs heterostructure has succeeded in yielding robust resistance measurements with high accuracy Elektrische Quantennormale spielen eine wichtige Rolle in der modernen Metrologie, besonders seit der Einführung des revidierten Einheitensystems (SI) im Mai 2019. Durch die Zurückführung der Basiseinheiten auf exakt definierte Naturkonstanten sind auch die quantisierten Werte von Widerstandsnormalen (QHR) exakt gegeben. Die Von-Klitzing-Konstante RK = h/e2 (h Planck-Konstante und e Elementarladung) lässt sich mittels des Quanten-Hall-Effekts (QHE) präzise messen und ist somit die primäre Darstellung des Ohm. Die Quanten-Widerstandsnormale bestehen aktuell aus robusten GaAs/AlGaAs-Heterostrukturen, die eine Genauigkeit |
| اللغة: | English |
| DOI: | 10.15488/10201 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70288ade250e8e224d7fba4b633ab04c |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi.dedup.....70288ade250e8e224d7fba4b633ab04c |
| قاعدة البيانات: | OpenAIRE |
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