Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials

التفاصيل البيبلوغرافية
العنوان: Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials
المؤلفون: Boxiang Song, Zerui Liu, Paulo S. Branicio, Subodh Tiwari, Yunxiang Wang, Priya Vashishta, Han Wang, Aravind Krishnamoorthy, Aiichiro Nakano, Wei Wu, Deming Meng, Xiaodong Yan, Pan Hu, Fanxin Liu, Buyun Chen, Tse-Hsien Ou, Rajiv K. Kalia, Hao Yang
المصدر: ACS Applied Electronic Materials. 2:1529-1537
بيانات النشر: American Chemical Society (ACS), 2020.
سنة النشر: 2020
مصطلحات موضوعية: Atomic layer deposition, Crystallinity, Materials science, law, Materials Chemistry, Electrochemistry, Nanotechnology, Memristor, Electronic systems, Layer (electronics), Electronic, Optical and Magnetic Materials, Resistive random-access memory, law.invention
الوصف: Memristive devices (i.e. memristors) can bring great benefits to many emerging applications that may play important roles in the future generations of electronic systems, such as bio-inspired neuro...
تدمد: 2637-6113
DOI: 10.1021/acsaelm.0c00148
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ba8e0ac36de7f8e3067ba1a50787d604
https://doi.org/10.1021/acsaelm.0c00148
Rights: CLOSED
رقم الانضمام: edsair.doi...........ba8e0ac36de7f8e3067ba1a50787d604
قاعدة البيانات: OpenAIRE
الوصف
تدمد:26376113
DOI:10.1021/acsaelm.0c00148