Non-volatile reconfigurable magnetic domain logic gates in a two-channel hall bar by spin-orbit torque current and read current direction
| العنوان: | Non-volatile reconfigurable magnetic domain logic gates in a two-channel hall bar by spin-orbit torque current and read current direction |
|---|---|
| المؤلفون: | JinPyo Hong, Jeonghun Shin, JeongWoo Seo, SaeGyoung Song |
| بيانات النشر: | Research Square Platform LLC, 2023. |
| سنة النشر: | 2023 |
| الوصف: | A long-standing goal of CMOS-based logic devices is to meet the needs of key markets, including ultralow-power operation, suitable scalability, and extremely high operation speed, along with the continuing miniaturization of the architecture. However, despite significant progress in their development, conventional CMOS-based devices still suffer from drawbacks such as introducing large unintended leakage currents and volatile behavior. Thus, reconfigurable logic gates based on magnetic domains (MD) have emerged as a highly promising option because they offer fast operation speeds, nonvolatility, and diverse logic functions in a single-device configuration. Here, we address multiple reconfigurable MD logic gates in a single two-channel Hall bar device by varying the voltage-driven read-current directions in W/CoFeB/MgO/Ta stacks. The nonvolatile MD switching behavior induced by spin–orbit torque (SOT)-driven spin currents significantly affects our logic gate functions, which are not necessarily synchronized to a single clock. By adapting diverse circuit connections and anomalous Hall voltage outputs, we identified eight reconfigurable logic gates, including AND, NAND, NOR, OR, INH, Converse INH, Converse IMP, and IMP, in a single device. Thus, these experimental findings represent a significant step forward in a wide range of spin-logic applications in the near future. |
| DOI: | 10.21203/rs.3.rs-2725720/v1 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::05f51755084c4be0462992c840549bed https://doi.org/10.21203/rs.3.rs-2725720/v1 |
| Rights: | OPEN |
| رقم الانضمام: | edsair.doi...........05f51755084c4be0462992c840549bed |
| قاعدة البيانات: | OpenAIRE |
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